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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTP08N100P

IXTP08N100P

MOSFET N-CH 1000V 800MA TO220AB

Littelfuse Inc.

247 -
IXTP08N100P

数据表

Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800mA (Tc) 10V 20Ohm @ 500mA, 10V Through Hole 4V @ 50µA 11.3 nC @ 10 V 1000 V ±20V 240 pF @ 25 V - - TO-220-3 - 42W (Tc) -55°C ~ 150°C (TJ)
IXTY44N10T

IXTY44N10T

MOSFET N-CH 100V 44A TO252

Littelfuse Inc.

298 -
IXTY44N10T

数据表

Trench TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 30mOhm @ 22A, 10V Surface Mount 4.5V @ 25µA 33 nC @ 10 V 100 V ±30V 1262 pF @ 25 V - - TO-252AA - 130W (Tc) -55°C ~ 175°C (TJ)
IXTP100N04T2

IXTP100N04T2

MOSFET N-CH 40V 100A TO220AB

Littelfuse Inc.

289 -
IXTP100N04T2

数据表

TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 7mOhm @ 25A, 10V Through Hole 4V @ 250µA 25.5 nC @ 10 V 40 V ±20V 2690 pF @ 25 V - - TO-220-3 - 150W (Tc) -55°C ~ 175°C (TJ)
IXTP110N055T2

IXTP110N055T2

MOSFET N-CH 55V 110A TO220AB

Littelfuse Inc.

300 -
IXTP110N055T2

数据表

TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 6.6mOhm @ 25A, 10V Through Hole 4V @ 250µA 57 nC @ 10 V 55 V ±20V 3060 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 175°C (TJ)
LSIC1MO120G0120

LSIC1MO120G0120

MOSFET SIC 1200V 18A TO247-4L

Littelfuse Inc.

9,987 -
LSIC1MO120G0120

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 27A (Tc) 20V 150mOhm @ 14A, 20V Through Hole 4V @ 7mA 63 nC @ 20 V 1200 V +22V, -6V 1130 pF @ 800 V - - TO-247-4L - 156W (Tc) -55°C ~ 175°C (TJ)
LSIC1MO120G0080

LSIC1MO120G0080

MOSFET SIC 1200V 25A TO247-4L

Littelfuse Inc.

7,766 -
LSIC1MO120G0080

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 39A (Tc) 20V 100mOhm @ 20A, 20V Through Hole 4V @ 10mA 92 nC @ 20 V 1200 V +22V, -6V 170 pF @ 800 V - - TO-247-4L - 214W (Tc) -55°C ~ 175°C (TJ)
LSIC1MO120G0160

LSIC1MO120G0160

MOSFET SIC 1200V 14A TO247-4L

Littelfuse Inc.

6,871 -
LSIC1MO120G0160

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 22A (Tc) 20V 200mOhm @ 10A, 20V Through Hole 4V @ 5mA 50 nC @ 20 V 1200 V +22V, -6V 890 pF @ 800 V - - TO-247-4L - 125W (Tc) -55°C ~ 175°C (TJ)
IXTP05N100

IXTP05N100

MOSFET N-CH 1000V 750MA TO220AB

Littelfuse Inc.

300 -
IXTP05N100

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 750mA (Tc) 10V 17Ohm @ 375mA, 10V Through Hole 4.5V @ 250µA 7.8 nC @ 10 V 1000 V ±30V 260 pF @ 25 V - - TO-220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
IXTA60N10T-TRL

IXTA60N10T-TRL

MOSFET N-CH 100V 60A TO263

Littelfuse Inc.

758 -
IXTA60N10T-TRL

数据表

Trench TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 18mOhm @ 25A, 10V Surface Mount 4.5V @ 50µA 49 nC @ 10 V 100 V ±20V 2650 pF @ 25 V - - TO-263 (D2PAK) - 176W (Tc) -55°C ~ 175°C (TJ)
IXFA7N80P

IXFA7N80P

MOSFET N-CH 800V 7A TO263

Littelfuse Inc.

257 -
IXFA7N80P

数据表

HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.44Ohm @ 3.5A, 10V Surface Mount 5V @ 1mA 32 nC @ 10 V 800 V ±30V 1890 pF @ 25 V - - TO-263AA (IXFA) - 200W (Tc) -55°C ~ 150°C (TJ)
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