Vishay General Semiconductor - Diodes Division|场效应晶体管（FETs）、MOSFETs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FA38SA50LC MOSFET N-CH 500V 38A SOT-227 Vishay General Semiconductor - Diodes Division	5,315	-	询价单	数据表	HEXFET®	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	130mOhm @ 23A, 10V	Chassis Mount	4V @ 250µA	420 nC @ 10 V	500 V	±20V	6900 pF @ 25 V	-	-	SOT-227	-	500W (Tc)	-55°C ~ 150°C (TJ)
VS-FA38SA50LCP MOSFET N-CH 500V 38A SOT-227 Vishay General Semiconductor - Diodes Division	7,089	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	130mOhm @ 23A, 10V	Chassis Mount	4V @ 250µA	420 nC @ 10 V	500 V	±20V	6900 pF @ 25 V	-	-	SOT-227	-	500W (Tc)	-55°C ~ 150°C (TJ)
FB180SA10 MOSFET N-CH 100V 180A SOT-227 Vishay General Semiconductor - Diodes Division	4,891	-	询价单	数据表	HEXFET®	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	6.5mOhm @ 108A, 10V	Chassis Mount	4V @ 250µA	380 nC @ 10 V	100 V	±20V	10700 pF @ 25 V	-	-	SOT-227	-	480W (Tc)	-55°C ~ 150°C (TJ)
VS-FA40SA50LC MOSFET N-CH 500V 40A SOT-227 Vishay General Semiconductor - Diodes Division	8,962	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	10V	130mOhm @ 23A, 10V	Chassis Mount	4V @ 250µA	420 nC @ 10 V	500 V	±20V	6900 pF @ 25 V	-	-	SOT-227	-	543W (Tc)	-55°C ~ 150°C (TJ)
FA57SA50LC MOSFET N-CH 500V 57A SOT-227 Vishay General Semiconductor - Diodes Division	6,645	-	询价单	数据表	HEXFET®	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	80mOhm @ 34A, 10V	Chassis Mount	4V @ 250µA	338 nC @ 10 V	500 V	±20V	10000 pF @ 25 V	-	-	SOT-227	-	625W (Tc)	-55°C ~ 150°C (TJ)
VS-FB180SA10P MOSFET N-CH 100V 180A SOT-227 Vishay General Semiconductor - Diodes Division	8,909	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	6.5mOhm @ 180A, 10V	Chassis Mount	4V @ 250µA	380 nC @ 10 V	100 V	±20V	10700 pF @ 25 V	-	-	SOT-227	-	480W (Tc)	-55°C ~ 150°C (TJ)
VS-FC420SA15 MOSFET N-CH 150V 400A SOT227 Vishay General Semiconductor - Diodes Division	54	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400A (Tc)	10V	2.75mOhm @ 200A, 10V	Chassis Mount	5.4V @ 1mA	250 nC @ 10 V	150 V	±20V	13700 pF @ 25 V	-	-	SOT-227	-	909W (Tc)	-55°C ~ 175°C (TJ)
VS-FB190SA10 MOSFET N-CH 100V 190A SOT227 Vishay General Semiconductor - Diodes Division	6,941	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	190A (Tj)	10V	6.5mOhm @ 180A, 10V	Chassis Mount	4.35V @ 250µA	250 nC @ 10 V	100 V	±20V	10700 pF @ 25 V	-	-	SOT-227	-	568W (Tc)	-55°C ~ 150°C (TJ)
VS-FA72SA50LC MOSFET N-CH 500V 72A SOT-227 Vishay General Semiconductor - Diodes Division	6,124	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	72A (Tc)	10V	80mOhm @ 34A, 10V	Chassis Mount	4V @ 250µA	338 nC @ 10 V	500 V	±20V	10000 pF @ 25 V	-	-	SOT-227	-	1136W (Tc)	-55°C ~ 150°C (TJ)
VS-FC220SA20 MOSFET N-CH 200V 220A SOT-227 Vishay General Semiconductor - Diodes Division	5,367	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	220A (Tc)	10V	7mOhm @ 150A, 10V	Chassis Mount	5.1V @ 500µA	350 nC @ 10 V	200 V	±30V	21000 pF @ 50 V	-	-	SOT-227	-	789W (Tc)	-55°C ~ 175°C (TJ)