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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STW7N105K5

STW7N105K5

MOSFET N-CH 1050V 4A TO247

STMicroelectronics

367 -
STW7N105K5

数据表

SuperMESH5™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2Ohm @ 2A, 10V Through Hole 5V @ 100µA 17 nC @ 10 V 1050 V ±30V 380 pF @ 100 V - - TO-247-3 - 110W (Tc) -55°C ~ 150°C (TJ)
STB10LN80K5

STB10LN80K5

MOSFET N-CHANNEL 800V 8A D2PAK

STMicroelectronics

890 -
STB10LN80K5

数据表

MDmesh™ K5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 630mOhm @ 4A, 10V Surface Mount 5V @ 100µA 15 nC @ 10 V 800 V ±30V 427 pF @ 100 V - - TO-263 (D2PAK) - 110W (Tc) -55°C ~ 150°C (TJ)
STP240N10F7

STP240N10F7

MOSFET N-CH 100V 180A TO220

STMicroelectronics

9,232 -
STP240N10F7

数据表

DeepGATE™, STripFET™ VII TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 3.2mOhm @ 60A, 10V Through Hole 4.5V @ 250µA 176 nC @ 10 V 100 V ±20V 12600 pF @ 25 V - - TO-220 - 300W (Tc) -55°C ~ 175°C (TJ)
STU2N95K5

STU2N95K5

MOSFET N-CH 950V 2A IPAK

STMicroelectronics

2 -
STU2N95K5

数据表

SuperMESH5™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 5Ohm @ 1A, 10V Through Hole 5V @ 100µA 10 nC @ 10 V 950 V 30V 105 pF @ 100 V - - TO-251 (IPAK) - 45W (Tc) -55°C ~ 150°C (TJ)
STB6N65M2

STB6N65M2

MOSFET N-CH 650V 4A D2PAK

STMicroelectronics

9,100 -
STB6N65M2

数据表

MDmesh™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.35Ohm @ 2A, 10V Surface Mount 4V @ 250µA 9.8 nC @ 10 V 650 V ±25V 226 pF @ 100 V - - TO-263 (D2PAK) - 60W (Tc) -55°C ~ 150°C (TJ)
STP80NF10FP

STP80NF10FP

MOSFET N-CH 100V 38A TO220FP

STMicroelectronics

1,042 -
STP80NF10FP

数据表

STripFET™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 15mOhm @ 40A, 10V Through Hole 4V @ 250µA 189 nC @ 10 V 100 V ±20V 4300 pF @ 25 V - - TO-220FP - 45W (Tc) -55°C ~ 175°C (TJ)
STF28N60DM2

STF28N60DM2

MOSFET N-CH 600V 21A TO220FP

STMicroelectronics

869 -
STF28N60DM2

数据表

MDmesh™ DM2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 160mOhm @ 10.5A, 10V Through Hole 5V @ 250µA 34 nC @ 10 V 600 V ±25V 1500 pF @ 100 V - - TO-220FP - 30W (Tc) -55°C ~ 150°C (TJ)
STW9NK95Z

STW9NK95Z

MOSFET N-CH 950V 7A TO247

STMicroelectronics

540 -
STW9NK95Z

数据表

SuperMESH™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.38Ohm @ 3.6A, 10V Through Hole 4.5V @ 100µA 56 nC @ 10 V 950 V ±30V 2256 pF @ 25 V - - TO-247-3 - 160W (Tc) -55°C ~ 150°C (TJ)
STP46NF30

STP46NF30

MOSFET N CH 300V 42A TO-220

STMicroelectronics

997 -
STP46NF30

数据表

STripFET™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 75mOhm @ 17A, 10V Through Hole 4V @ 250µA 90 nC @ 10 V 300 V ±20V 3200 pF @ 25 V - - TO-220 - 300W (Tc) 175°C (TJ)
STF10NM60N

STF10NM60N

MOSFET N-CH 600V 10A TO220FP

STMicroelectronics

489 -
STF10NM60N

数据表

MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 550mOhm @ 4A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 600 V ±25V 540 pF @ 50 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
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