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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STW24N60M2

STW24N60M2

MOSFET N-CH 600V 18A TO247

STMicroelectronics

468 -
STW24N60M2

数据表

MDmesh™ II Plus TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 190mOhm @ 9A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 600 V ±25V 1060 pF @ 100 V - - TO-247-3 - 150W (Tc) -55°C ~ 150°C (TJ)
STP150N10F7

STP150N10F7

MOSFET N-CH 100V 110A TO220

STMicroelectronics

440 -
STP150N10F7

数据表

DeepGATE™, STripFET™ VII TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 4.2mOhm @ 55A, 10V Through Hole 4.5V @ 250µA 117 nC @ 10 V 100 V ±20V 8115 pF @ 50 V - - TO-220 - 250W (Tc) -55°C ~ 175°C (TJ)
STL260N4F7

STL260N4F7

MOSFET N-CH 40V 120A POWERFLAT

STMicroelectronics

2,187 -
STL260N4F7

数据表

STripFET™ F7 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 1.1mOhm @ 24A, 10V Surface Mount 4V @ 250µA 72 nC @ 10 V 40 V ±20V 5000 pF @ 25 V - - PowerFlat™ (5x6) - 188W (Tc) -55°C ~ 175°C (TJ)
STB140NF55T4

STB140NF55T4

MOSFET N-CH 55V 80A D2PAK

STMicroelectronics

1,979 -
STB140NF55T4

数据表

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 8mOhm @ 40A, 10V Surface Mount 4V @ 250µA 142 nC @ 10 V 55 V ±20V 5300 pF @ 25 V - - D2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
STI21N65M5

STI21N65M5

MOSFET N-CH 650V 17A I2PAK

STMicroelectronics

3,480 -
STI21N65M5

数据表

MDmesh™ V TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 179mOhm @ 8.5A, 10V Through Hole 5V @ 250µA 50 nC @ 10 V 650 V ±25V 1950 pF @ 100 V - - I2PAK - 125W (Tc) 150°C (TJ)
STF20N65M5

STF20N65M5

MOSFET N-CH 650V 18A TO220FP

STMicroelectronics

2,192 -
STF20N65M5

数据表

MDmesh™ V TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 190mOhm @ 9A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 650 V ±25V 1345 pF @ 100 V - - TO-220FP - 30W (Tc) 150°C (TJ)
STW18N60M2

STW18N60M2

MOSFET N-CH 600V 13A TO247

STMicroelectronics

417 -
STW18N60M2

数据表

MDmesh™ II Plus TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 280mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 21.5 nC @ 10 V 600 V ±25V 791 pF @ 100 V - - TO-247-3 - 110W (Tc) -55°C ~ 150°C (TJ)
STL25N60M2-EP

STL25N60M2-EP

MOSFET N-CH 600V 16A PWRFLAT HV

STMicroelectronics

2,947 -
STL25N60M2-EP

数据表

MDmesh™ M2-EP 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 205mOhm @ 8A, 10V Surface Mount 4.75V @ 250µA 29 nC @ 10 V 600 V ±25V 1090 pF @ 100 V - - PowerFlat™ (8x8) HV - 125W (Tc) -55°C ~ 150°C (TJ)
STU7N105K5

STU7N105K5

MOSFET N-CH 1050V 4A IPAK

STMicroelectronics

1,303 -
STU7N105K5

数据表

SuperMESH5™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2Ohm @ 2A, 10V Through Hole 5V @ 100µA 17 nC @ 10 V 1050 V ±30V 380 pF @ 100 V - - IPAK (TO-251) - 110W (Tc) -55°C ~ 150°C (TJ)
STP18N55M5

STP18N55M5

MOSFET N-CH 550V 16A TO220AB

STMicroelectronics

849 -
STP18N55M5

数据表

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 192mOhm @ 8A, 10V Through Hole 5V @ 250µA 31 nC @ 10 V 550 V ±25V 1260 pF @ 100 V - - TO-220 - 110W (Tc) 150°C (TJ)
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