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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STFU16N65M2MOSFET N-CH 650V 11A TO220FP STMicroelectronics |
6,268 | - |
|
数据表 |
MDmesh™ M2 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | 19.5 nC @ 10 V | 650 V | ±25V | 718 pF @ 100 V | - | - | TO-220FP | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
STL22N60M6MOSFET N-CH 600V 10A PWRFLAT HV STMicroelectronics |
3,541 | - |
|
数据表 |
MDmesh™ M6 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 250mOhm @ 5A, 10V | Surface Mount | 4.75V @ 250µA | 20 nC @ 10 V | 600 V | ±25V | 800 pF @ 100 V | - | - | PowerFlat™ (5x6) HV | - | 57W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STFU26N60M2MOSFET N-CH 600V 20A TO220FP STMicroelectronics |
2,701 | - |
|
数据表 |
MDmesh™ M2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | 34 nC @ 10 V | 600 V | ±25V | 1360 pF @ 100 V | - | - | TO-220FP | - | 30W (Tc) | -55°C ~ 150°C (TJ) |
|
STW70N10F4MOSFET N-CH 100V 65A TO247-3 STMicroelectronics |
2,311 | - |
|
数据表 |
DeepGATE™, STripFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 10V | 19.5mOhm @ 30A, 10V | Through Hole | 4V @ 250µA | 85 nC @ 10 V | 100 V | ±20V | 5800 pF @ 25 V | - | - | TO-247-3 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STL18N60M6MOSFET N-CH 600V 9A POWERFLAT HV STMicroelectronics |
8,655 | - |
|
数据表 |
MDmesh™ M6 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 308mOhm @ 6.5A, 10V | Surface Mount | 4.75V @ 250µA | 16.8 nC @ 10 V | 600 V | ±25V | 650 pF @ 100 V | - | - | PowerFlat™ (5x6) HV | - | 57W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFP250MOSFET N-CH 200V 33A TO247-3 STMicroelectronics |
2,345 | - |
|
数据表 |
PowerMESH™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 85mOhm @ 16A, 10V | Through Hole | 4V @ 250µA | 158 nC @ 10 V | 200 V | ±20V | 2850 pF @ 25 V | - | - | TO-247-3 | - | 180W (Tc) | 150°C (TJ) |
|
STB60NE06L-16T4MOSFET N-CH 60V 60A D2PAK STMicroelectronics |
3,232 | - |
|
数据表 |
STripFET™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | Surface Mount | 2.5V @ 250µA | 70 nC @ 4.5 V | 60 V | ±15V | 4150 pF @ 25 V | - | - | D2PAK | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
STB60NF10-1MOSFET N-CH 100V 80A I2PAK STMicroelectronics |
5,950 | - |
|
数据表 |
STripFET™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 23mOhm @ 40A, 10V | Through Hole | 4V @ 250µA | 104 nC @ 10 V | 100 V | ±20V | 4270 pF @ 25 V | - | - | I2PAK | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
STL6N2VH5MOSFET N-CH 20V POWERFLAT STMicroelectronics |
2,764 | 1+：￥0.118056 |
|
数据表 |
STripFET™ V | 6-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tj) | 2.5V, 4.5V | 30mOhm @ 3A, 4.5V | Surface Mount | 700mV @ 250µA (Min) | 6 nC @ 4.5 V | 20 V | ±8V | 550 pF @ 16 V | - | - | PowerFlat™ (2x2) | - | 2.4W (Tc) | -55°C ~ 150°C (TJ) |
|
STP10N80K5MOSFET N-CH 800V 9A TO220 STMicroelectronics |
4,298 | - |
|
数据表 |
MDmesh™ K5 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 600mOhm @ 4.5A, 10V | Through Hole | 5V @ 100µA | 22 nC @ 10 V | 800 V | ±30V | 635 pF @ 100 V | - | - | TO-220 | - | 130W (Tc) | -55°C ~ 150°C (TJ) |
