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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STL305N4LF8AGPOWERFLAT 5X6 WF STMicroelectronics |
976 | - |
|
数据表 |
STripFET™ F8 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 1mOhm @ 60A, 10V | Surface Mount | 2V @ 250µA | 70 nC @ 10 V | 40 V | ±16V | 5400 pF @ 25 V | AEC-Q101 | - | PowerFlat™ (5x6) | Automotive | 167W (Tc) | -55°C ~ 175°C (TJ) |
|
STB10N60M2MOSFET N-CH 600V 7.5A D2PAK STMicroelectronics |
700 | - |
|
数据表 |
MDmesh™ II Plus | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7.5A (Tc) | 10V | 600mOhm @ 3A, 10V | Surface Mount | 4V @ 250µA | 13.5 nC @ 10 V | 600 V | ±25V | 400 pF @ 100 V | - | - | TO-263 (D2PAK) | - | 85W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STD9N65DM6AGDISCRETE STMicroelectronics |
3,654 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 440mOhm @ 4.5A, 10V | Surface Mount | 4.75V @ 250µA | 11.7 nC @ 10 V | 650 V | ±25V | 510 pF @ 100 V | AEC-Q101 | - | TO-252 (DPAK) | Automotive | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STP80N900K6Linear IC's STMicroelectronics |
5,000 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 900mOhm @ 2A, 10V | Through Hole | 4V @ 50µA | 7 nC @ 10 V | 800 V | ±30V | 362 pF @ 400 V | - | - | TO-220 | - | 68W (Tc) | -55°C ~ 150°C (TJ) |
|
STF16N65M2MOSFET N-CH 650V 11A TO220FP STMicroelectronics |
998 | - |
|
数据表 |
MDmesh™ M2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | 19.5 nC @ 10 V | 650 V | ±25V | 718 pF @ 100 V | - | - | TO-220FP | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
STD16N60M6MOSFET N-CH 600V 12A DPAK STMicroelectronics |
2,347 | - |
|
数据表 |
MDmesh™ M6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | Surface Mount | 4.75V @ 250µA | 16.7 nC @ 10 V | 600 V | ±25V | 575 pF @ 100 V | - | - | TO-252 (DPAK) | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
STP75N75F4MOSFET N-CH 75V 78A TO220 STMicroelectronics |
8,683 | - |
|
数据表 |
DeepGATE™, STripFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 78A (Tc) | 10V | 11mOhm @ 39A, 10V | Through Hole | 4V @ 250µA | 76 nC @ 10 V | 75 V | ±20V | 5015 pF @ 25 V | - | - | TO-220 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STFI11N60M2-EPMOSFET N-CH 600V I2PAK-FP STMicroelectronics |
8,778 | - |
|
数据表 |
MDmesh™ | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.5A (Tc) | 10V | 595mOhm @ 3.75A, 10V | Through Hole | 4.75V @ 250µA | 12.4 nC @ 10 V | 600 V | ±25V | 390 pF @ 100 V | - | - | I2PAKFP (TO-281) | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
STU7NM60NMOSFET N-CH 600V 5A IPAK STMicroelectronics |
2,853 | - |
|
数据表 |
MDmesh™ II | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | Through Hole | 4V @ 250µA | 14 nC @ 10 V | 600 V | ±25V | 363 pF @ 50 V | - | - | TO-251 (IPAK) | - | 45W (Tc) | 150°C (TJ) |
|
|
STP16NS25MOSFET N-CH 250V 16A TO220AB STMicroelectronics |
9,813 | - |
|
数据表 |
MESH OVERLAY™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 280mOhm @ 8A, 10V | Through Hole | 4V @ 250µA | 83 nC @ 10 V | 250 V | ±20V | 1270 pF @ 25 V | - | - | TO-220 | - | 140W (Tc) | -65°C ~ 150°C (TJ) |
