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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STP4N90K5MOSFET N-CH 900V 3A TO220 STMicroelectronics |
5,497 | - |
|
数据表 |
MDmesh™ K5 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 2.1Ohm @ 1A, 10V | Through Hole | 5V @ 100µA | 5.3 nC @ 10 V | 900 V | ±30V | 173 pF @ 100 V | - | - | TO-220 | - | 60W (Tc) | -55°C ~ 150°C (TJ) |
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|
STD11NM50NMOSFET N-CH 500V 8.5A DPAK STMicroelectronics |
5,719 | - |
|
数据表 |
MDmesh™ II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8.5A (Tc) | 10V | 470mOhm @ 4.5A, 10V | Surface Mount | 4V @ 250µA | 19 nC @ 10 V | 500 V | ±25V | 547 pF @ 50 V | - | - | DPAK | - | 70W (Tc) | 150°C (TJ) |
|
STD12N60DM2AGAUTOMOTIVE-GRADE N-CHANNEL 600 V STMicroelectronics |
3,303 | - |
|
数据表 |
MDmesh™ DM2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 0V, 10V | 430mOhm @ 5A, 10V | Surface Mount | 5V @ 250µA | 14.5 nC @ 10 V | 600 V | ±25V | 614 pF @ 100 V | AEC-Q101 | - | TO-252 (DPAK) | Automotive | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
STFU24N60M2MOSFET N-CH 600V 18A TO220FP STMicroelectronics |
8,165 | - |
|
数据表 |
MDmesh™ M2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | Through Hole | 4V @ 250µA | 29 nC @ 10 V | 600 V | ±25V | 1060 pF @ 100 V | - | - | TO-220FP | - | 30W (Tc) | -55°C ~ 150°C (TJ) |
|
STW16N65M5MOSFET N-CH 650V 12A TO247-3 STMicroelectronics |
8,887 | - |
|
数据表 |
MDmesh™ V | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 279mOhm @ 6A, 10V | Through Hole | 5V @ 250µA | 31 nC @ 10 V | 650 V | ±25V | 1250 pF @ 100 V | - | - | TO-247-3 | - | 90W (Tc) | 150°C (TJ) |
|
STL100N8F7MOSFET N-CH 80V 100A POWERFLAT STMicroelectronics |
4,606 | - |
|
数据表 |
STripFET™ | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 6.1mOhm @ 10A, 10V | Surface Mount | 4.5V @ 250µA | 46.8 nC @ 10 V | 80 V | ±20V | 3435 pF @ 40 V | - | - | PowerFlat™ (5x6) | - | 4.8W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) |
|
STB55NF06T4MOSFET N-CH 60V 50A D2PAK STMicroelectronics |
2,721 | - |
|
数据表 |
STripFET™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 18mOhm @ 27.5A, 10V | Surface Mount | 4V @ 250µA | 60 nC @ 10 V | 60 V | ±20V | 1300 pF @ 25 V | - | - | D2PAK | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
STB18N60M6MOSFET N-CH 600V 13A D2PAK STMicroelectronics |
5,358 | - |
|
数据表 |
MDmesh™ M6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | Surface Mount | 4.75V @ 250µA | 16.8 nC @ 10 V | 600 V | ±25V | 650 pF @ 100 V | - | - | TO-263 (D2PAK) | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
STP9NM60NMOSFET N-CH 600V 6.5A TO220AB STMicroelectronics |
3,189 | - |
|
数据表 |
MDmesh™ II | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 745mOhm @ 3.25A, 10V | Through Hole | 4V @ 250µA | 17.4 nC @ 10 V | 600 V | ±25V | 452 pF @ 50 V | - | - | TO-220 | - | 70W (Tc) | 150°C (TJ) |
|
|
STB155N3LH6MOSFET N-CH 30V 80A D2PAK STMicroelectronics |
2,918 | - |
|
数据表 |
DeepGATE™, STripFET™ VI | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 5V, 10V | 3mOhm @ 40A, 10V | Surface Mount | 2.5V @ 250µA | 80 nC @ 5 V | 30 V | ±20V | 3800 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
