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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STD6N62K3

STD6N62K3

MOSFET N-CH 620V 5.5A DPAK

STMicroelectronics

196 -
STD6N62K3

数据表

SuperMESH3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.28Ohm @ 2.8A, 10V Surface Mount 4.5V @ 50µA 25.7 nC @ 10 V 620 V ±30V 706 pF @ 50 V - - DPAK - 90W (Tc) 150°C (TJ)
STD4NK80Z-1

STD4NK80Z-1

MOSFET N-CH 800V 3A IPAK

STMicroelectronics

304 -
STD4NK80Z-1

数据表

SuperMESH™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 3.5Ohm @ 1.5A, 10V Through Hole 4.5V @ 50µA 22.5 nC @ 10 V 800 V ±30V 575 pF @ 25 V - - TO-251 (IPAK) - 80W (Tc) -55°C ~ 150°C (TJ)
STD5NM60-1

STD5NM60-1

MOSFET N-CH 600V 5A IPAK

STMicroelectronics

62 -
STD5NM60-1

数据表

MDmesh™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 18 nC @ 10 V 600 V ±30V 400 pF @ 25 V - - IPAK - 96W (Tc) -55°C ~ 150°C (TJ)
STF10N105K5

STF10N105K5

MOSFET N-CH 1050V 6A TO220FP

STMicroelectronics

45 -
STF10N105K5

数据表

MDmesh™ K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.3Ohm @ 3A, 10V Through Hole 5V @ 100µA 21.5 nC @ 10 V 1050 V 30V 545 pF @ 100 V - - TO-220FP - 30W (Tc) -55°C ~ 150°C (TJ)
STW18N60DM2

STW18N60DM2

MOSFET N-CH 600V 12A TO247

STMicroelectronics

64 -
STW18N60DM2

数据表

MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 295mOhm @ 6A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 600 V ±25V 800 pF @ 100 V - - TO-247-3 - 90W (Tc) 150°C (TJ)
STF24N65M2

STF24N65M2

MOSFET N-CH 650V 16A TO220FP

STMicroelectronics

87 -
STF24N65M2

数据表

MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 230mOhm @ 8A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 650 V ±25V 1060 pF @ 100 V - - TO-220FP - 30W (Tc) -55°C ~ 150°C (TJ)
STW35N60DM2

STW35N60DM2

MOSFET N-CH 600V 28A TO247

STMicroelectronics

27 -
STW35N60DM2

数据表

MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 110mOhm @ 14A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 600 V ±25V 2400 pF @ 100 V - - TO-247-3 - 210W (Tc) -55°C ~ 150°C (TJ)
STI47N60DM6AG

STI47N60DM6AG

POWER TRANSISTORS

STMicroelectronics

30 -
STI47N60DM6AG

数据表

MDmesh™ DM6 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 80mOhm @ 18A, 10V Through Hole 4.75V @ 250µA 55 nC @ 10 V 600 V ±25V 2350 pF @ 100 V AEC-Q101 - TO-262 (I2PAK) Automotive 250W (Tc) -55°C ~ 150°C (TJ)
STL36N60M6

STL36N60M6

MOSFET N-CH 600V 25A PWRFLAT HV

STMicroelectronics

50 -
STL36N60M6

数据表

MDmesh™ M6 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 110mOhm @ 12.5A, 10V Surface Mount 4.75V @ 250µA 44.3 nC @ 10 V 600 V ±25V 1960 pF @ 100 V - - PowerFlat™ (8x8) HV - 160W (Tc) -55°C ~ 150°C (TJ)
STB25NM50N-1

STB25NM50N-1

MOSFET N-CH 500V 22A I2PAK

STMicroelectronics

4,982 -
STB25NM50N-1

数据表

MDmesh™ II TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 140mOhm @ 11A, 10V Through Hole 4V @ 250µA 84 nC @ 10 V 500 V ±25V 2565 pF @ 25 V - - I2PAK - 160W (Tc) 150°C (TJ)
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