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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STU4N62K3

STU4N62K3

MOSFET N-CH 620V 3.8A IPAK

STMicroelectronics

1 -
STU4N62K3

数据表

SuperMESH3™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 10V 2Ohm @ 1.9A, 10V Through Hole 4.5V @ 50µA 22 nC @ 10 V 620 V ±30V 550 pF @ 50 V - - TO-251 (IPAK) - 70W (Tc) 150°C (TJ)
STD20N20T4

STD20N20T4

MOSFET N-CH 200V 18A DPAK

STMicroelectronics

9,815 -
STD20N20T4

数据表

STripFET™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 125mOhm @ 10A, 10V Surface Mount 4V @ 250µA 39 nC @ 10 V 200 V ±20V 940 pF @ 25 V - - DPAK - 90W (Tc) -
STL10N60M2

STL10N60M2

MOSFET N-CH 600V 5.5A PWRFLAT56

STMicroelectronics

6,627 -
STL10N60M2

数据表

MDmesh™ II Plus 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 660mOhm @ 2.5A, 10V Surface Mount 4V @ 250µA 13.5 nC @ 10 V 600 V ±25V 400 pF @ 100 V - - PowerFlat™ (5x6) HV - 48W (Tc) 150°C (TJ)
STH275N8F7-6AG

STH275N8F7-6AG

MOSFET N-CH 80V 180A H2PAK-6

STMicroelectronics

1,842 -
STH275N8F7-6AG

数据表

STripFET™ F7 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 2.1mOhm @ 90A, 10V Surface Mount 4.5V @ 250µA 193 nC @ 10 V 80 V ±20V 13600 pF @ 50 V AEC-Q101 - H2PAK-6 Automotive 315W (Tc) -55°C ~ 175°C (TJ)
STF22NM60N

STF22NM60N

MOSFET N-CH 600V 16A TO220FP

STMicroelectronics

1,944 -
STF22NM60N

数据表

MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 220mOhm @ 8A, 10V Through Hole 4V @ 100µA 44 nC @ 10 V 600 V ±30V 1300 pF @ 50 V - - TO-220FP - 30W (Tc) -55°C ~ 150°C (TJ)
SCT10N120AG

SCT10N120AG

SICFET N-CH 1200V 12A HIP247

STMicroelectronics

569 -
SCT10N120AG

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 12A (Tc) 20V 690mOhm @ 6A, 20V Through Hole 3.5V @ 250µA 22 nC @ 20 V 1200 V +25V, -10V 290 pF @ 400 V AEC-Q101 - HiP247™ Automotive 150W (Tc) -55°C ~ 200°C (TJ)
STU10N60M2

STU10N60M2

MOSFET N-CH 600V 7.5A IPAK

STMicroelectronics

59 -
STU10N60M2

数据表

MDmesh™ II Plus TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 600mOhm @ 3A, 10V Through Hole 4V @ 250µA 13.5 nC @ 10 V 600 V ±25V 400 pF @ 100 V - - TO-251 (IPAK) - 85W (Tc) -55°C ~ 150°C (TJ)
STB200N4F3

STB200N4F3

MOSFET N-CH 40V 120A D2PAK

STMicroelectronics

9,220 -
STB200N4F3

数据表

STripFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4mOhm @ 80A, 10V Surface Mount 4V @ 250µA 75 nC @ 10 V 40 V ±20V 5100 pF @ 25 V - - D2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
STW30N65M5

STW30N65M5

MOSFET N-CH 650V 22A TO247-3

STMicroelectronics

259 -
STW30N65M5

数据表

MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 139mOhm @ 11A, 10V Through Hole 5V @ 250µA 64 nC @ 10 V 650 V ±25V 2880 pF @ 100 V - - TO-247-3 - 140W (Tc) 150°C (TJ)
STW3N170

STW3N170

MOSFET N-CH 1700V 2.6A TO247-3

STMicroelectronics

494 -
STW3N170

数据表

PowerMESH™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 13Ohm @ 1.3A, 10V Through Hole 5V @ 250µA 44 nC @ 10 V 1700 V ±30V 1100 pF @ 100 V - - TO-247-3 - 160W (Tc) -55°C ~ 150°C (TJ)
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