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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDC6392S

FDC6392S

MOSFET P-CH 20V 2.2A SUPERSOT6

onsemi

9,241 -
FDC6392S

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.2A (Ta) 2.5V, 4.5V 150mOhm @ 2.2A, 4.5V Surface Mount 1.5V @ 250µA 5.2 nC @ 4.5 V 20 V ±12V 369 pF @ 10 V - Schottky Diode (Isolated) SuperSOT™-6 - 960mW (Ta) -55°C ~ 150°C (TJ)
NVBG025N065SC1

NVBG025N065SC1

SIC MOS D2PAK-7L 650V

onsemi

790 -
NVBG025N065SC1

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 106A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V Surface Mount 4.3V @ 15.5mA 164 nC @ 18 V 650 V - 3480 pF @ 325 V AEC-Q101 - D2PAK-7 Automotive 395W (Tc) -55°C ~ 175°C (TJ)
FDN371N

FDN371N

MOSFET N-CH 20V 2.5A SUPERSOT3

onsemi

7,365 -
FDN371N

数据表

PowerTrench® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 2.5V, 4.5V 50mOhm @ 2.5A, 4.5V Surface Mount 1.5V @ 250µA 10.7 nC @ 4.5 V 20 V ±12V 815 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
NVH4L022N120M3S

NVH4L022N120M3S

SIC MOS TO247-4L 22MOHM 1200V

onsemi

820 -
NVH4L022N120M3S

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 68A (Tc) 18V 30mOhm @ 40A, 18V Through Hole 4.4V @ 20mA 151 nC @ 18 V 1200 V +22V, -10V 3175 pF @ 800 V AEC-Q101 - TO-247-4L Automotive 352W (Tc) -55°C ~ 175°C (TJ)
NVHL020N090SC1

NVHL020N090SC1

SICFET N-CH 900V 118A TO247-3

onsemi

168 -
NVHL020N090SC1

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 118A (Tc) 15V 28mOhm @ 60A, 15V Through Hole 4.3V @ 20mA 196 nC @ 15 V 900 V +19V, -10V 4415 pF @ 450 V AEC-Q101 - TO-247-3 Automotive 503W (Tc) -55°C ~ 175°C (TJ)
FQD3P50TM-F085

FQD3P50TM-F085

MOSFET P-CH 500V 2.1A DPAK

onsemi

5,952 -
FQD3P50TM-F085

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 4.9Ohm @ 1.05A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 500 V ±30V 660 pF @ 25 V AEC-Q101 - TO-252AA Automotive 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C460NLWFAFT3G

NVMFS5C460NLWFAFT3G

MOSFET N-CH 40V 21A/78A 5DFN

onsemi

3,112 -
NVMFS5C460NLWFAFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 21A (Ta), 78A (Tc) 4.5V, 10V 4.5mOhm @ 35A, 10V Surface Mount 2V @ 250µA 23 nC @ 10 V 40 V ±20V 1300 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
FDS3612

FDS3612

MOSFET N-CH 100V 3.4A 8SOIC

onsemi

2,605 -
FDS3612

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.4A (Ta) 6V, 10V 120mOhm @ 3.4A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 100 V ±20V 632 pF @ 50 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
NVMFS5C670NLAFT3G

NVMFS5C670NLAFT3G

MOSFET N-CH 60V 17A/71A 5DFN

onsemi

5,656 -
NVMFS5C670NLAFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 17A (Ta), 71A (Tc) 4.5V, 10V 6.1mOhm @ 35A, 10V Surface Mount 2V @ 53µA 20 nC @ 10 V 60 V ±20V 1400 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 61W (Tc) -55°C ~ 175°C (TJ)
FQP44N10F

FQP44N10F

MOSFET N-CH 100V 43.5A TO220-3

onsemi

5,467 -
FQP44N10F

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 43.5A (Tc) 10V 39mOhm @ 21.75A, 10V Through Hole 4V @ 250µA 62 nC @ 10 V 100 V ±25V 1800 pF @ 25 V - - TO-220-3 - 146W (Tc) -55°C ~ 175°C (TJ)
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