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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQPF3N90_NL

FQPF3N90_NL

MOSFET N-CH 900V 2.1A TO220F

onsemi

8,376 -
FQPF3N90_NL

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 4.25Ohm @ 1.05A, 10V Through Hole 5V @ 250µA 26 nC @ 10 V 900 V ±30V 910 pF @ 25 V - - TO-220F-3 - 43W (Tc) -55°C ~ 150°C (TJ)
HUFA76645S3ST-F085

HUFA76645S3ST-F085

MOSFET N-CH 100V 75A D2PAK

onsemi

9,401 -
HUFA76645S3ST-F085

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 14mOhm @ 75A, 10V Surface Mount 3V @ 250µA 153 nC @ 10 V 100 V ±16V 4400 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 310W (Tc) -55°C ~ 175°C (TJ)
IRF530A

IRF530A

MOSFET N-CH 100V 14A TO220-3

onsemi

3,875 -
IRF530A

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 110mOhm @ 7A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 100 V ±20V 790 pF @ 25 V - - TO-220-3 - 55W (Tc) -55°C ~ 175°C (TJ)
IRF540A

IRF540A

MOSFET N-CH 100V 28A TO220-3

onsemi

5,176 -
IRF540A

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 52mOhm @ 14A, 10V Through Hole 4V @ 250µA 78 nC @ 10 V 100 V ±20V 1710 pF @ 25 V - - TO-220-3 - 107W (Tc) -55°C ~ 175°C (TJ)
IRF620B_FP001

IRF620B_FP001

MOSFET N-CH 200V 5A TO220-3

onsemi

4,253 -
IRF620B_FP001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 800mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 16 nC @ 10 V 200 V ±30V 390 pF @ 25 V - - TO-220-3 - 47W (Tc) -55°C ~ 150°C (TJ)
IRF630BTSTU_FP001

IRF630BTSTU_FP001

MOSFET N-CH 200V 9A TO220-3

onsemi

3,738 -
IRF630BTSTU_FP001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 400mOhm @ 4.5A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 200 V ±30V 720 pF @ 25 V - - TO-220-3 - 72W (Tc) -55°C ~ 150°C (TJ)
IRF634B-FP001

IRF634B-FP001

MOSFET N-CH 250V 8.1A TO220-3

onsemi

3,933 -
IRF634B-FP001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.1A (Tc) 10V 450mOhm @ 4.05A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 250 V ±30V 1000 pF @ 25 V - - TO-220-3 - 74W (Tc) -55°C ~ 150°C (TJ)
IRF644B-FP001

IRF644B-FP001

MOSFET N-CH 250V 14A TO220-3

onsemi

6,449 -
IRF644B-FP001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 280mOhm @ 7A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 250 V ±30V 1600 pF @ 25 V - - TO-220-3 - 139W (Tc) -55°C ~ 150°C (TJ)
IRF740B

IRF740B

MOSFET N-CH 400V 10A TO220-3

onsemi

2,449 -
IRF740B

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 540mOhm @ 5A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 400 V ±30V 1800 pF @ 25 V - - TO-220-3 - 134W (Tc) -55°C ~ 150°C (TJ)
IRF840B

IRF840B

MOSFET N-CH 500V 8A TO220-3

onsemi

6,898 -
IRF840B

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 800mOhm @ 4A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 500 V ±30V 1800 pF @ 25 V - - TO-220-3 - 134W (Tc) -55°C ~ 150°C (TJ)
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