富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQD5N60CTM_F080

FQD5N60CTM_F080

MOSFET N-CH 600V 2.8A DPAK

onsemi

2,559 -
FQD5N60CTM_F080

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.5Ohm @ 1.4A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 600 V ±30V 670 pF @ 25 V - - TO-252AA - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ)
FQD5P20TM_F080

FQD5P20TM_F080

MOSFET P-CH 200V 3.7A DPAK

onsemi

3,974 -
FQD5P20TM_F080

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.7A (Tc) 10V 1.4Ohm @ 1.85A, 10V Surface Mount 5V @ 250µA 13 nC @ 10 V 200 V ±30V 430 pF @ 25 V - - TO-252AA - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
FQD6N50CTM_F080

FQD6N50CTM_F080

MOSFET N-CH 500V 4.5A DPAK

onsemi

2,197 -
FQD6N50CTM_F080

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.2Ohm @ 2.25A, 10V Surface Mount 4V @ 250µA 25 nC @ 10 V 500 V ±30V 700 pF @ 25 V - - TO-252AA - 2.5W (Ta), 61W (Tc) -55°C ~ 150°C (TJ)
FQD7N20TM_F080

FQD7N20TM_F080

MOSFET N-CH 200V 5.3A DPAK

onsemi

5,064 -
FQD7N20TM_F080

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 690mOhm @ 2.65A, 10V Surface Mount 5V @ 250µA 10 nC @ 10 V 200 V ±30V 400 pF @ 25 V - - TO-252AA - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
FQD7P20TM_F080

FQD7P20TM_F080

MOSFET P-CH 200V 5.7A DPAK

onsemi

8,727 -
FQD7P20TM_F080

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.7A (Tc) 10V 690mOhm @ 2.85A, 10V Surface Mount 5V @ 250µA 25 nC @ 10 V 200 V ±30V 770 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
FQD8P10TM_F080

FQD8P10TM_F080

MOSFET P-CH 100V 6.6A DPAK

onsemi

2,443 -
FQD8P10TM_F080

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.6A (Tc) 10V 530mOhm @ 3.3A, 10V Surface Mount 4V @ 250µA 15 nC @ 10 V 100 V ±30V 470 pF @ 25 V - - TO-252AA - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ)
FQH44N10-F133

FQH44N10-F133

MOSFET N-CH 100V 48A TO247-3

onsemi

8,036 -
FQH44N10-F133

数据表

QFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 39mOhm @ 24A, 10V Through Hole 4V @ 250µA 62 nC @ 10 V 100 V ±25V 1800 pF @ 25 V - - TO-247-3 - 180W (Tc) -55°C ~ 175°C (TJ)
FQP19N20C_F080

FQP19N20C_F080

MOSFET N-CH 200V 19A TO220-3

onsemi

6,850 -
FQP19N20C_F080

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 170mOhm @ 9.5A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 200 V ±30V 1080 pF @ 25 V - - TO-220-3 - 139W (Tc) -55°C ~ 150°C (TJ)
FQP32N20C_F080

FQP32N20C_F080

MOSFET N-CH 200V 28A TO220-3

onsemi

8,142 -
FQP32N20C_F080

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 82mOhm @ 14A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 200 V ±30V 2200 pF @ 25 V - - TO-220-3 - 156W (Tc) -55°C ~ 150°C (TJ)
FQP6N60C_F080

FQP6N60C_F080

MOSFET N-CH 600V 5.5A TO220-3

onsemi

2,160 -
FQP6N60C_F080

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 600 V ±30V 810 pF @ 25 V - - TO-220-3 - 125W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户