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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
CMS45P03H8-HF

CMS45P03H8-HF

MOSFET P-CH 30V 9.6A/45A DFN5X6

Comchip Technology

8,787 -
CMS45P03H8-HF

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.6A (Ta), 45A (Tc) 4.5V, 10V 15mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 22 nC @ 4.5 V 30 V ±20V 2215 pF @ 15 V - - DFN5x6 (PR-PAK) - 2W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
DMP65H20D0HSS-13

DMP65H20D0HSS-13

MOSFET BVDSS: 501V~650V SO-8 T&R

Diodes Incorporated

6,887 -
DMP65H20D0HSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200mA (Ta) 10V 20Ohm @ 200mA, 10V Surface Mount 4V @ 250µA 9.7 nC @ 10 V 600 V ±30V 400 pF @ 25 V - - 8-SO - 1.9W (Ta) -55°C ~ 150°C (TJ)
DMT15H053SPSW-13

DMT15H053SPSW-13

MOSFET BVDSS: 101V~250V POWERDI5

Diodes Incorporated

6,073 -
DMT15H053SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 66mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 11.5 nC @ 10 V 150 V ±20V 814 pF @ 75 V - - PowerDI5060-8 (Type UX) - 1.9W (Ta), 90W (Tc) -55°C ~ 150°C (TJ)
DMTH15H053SPSW-13

DMTH15H053SPSW-13

MOSFET BVDSS: 101V~250V POWERDI5

Diodes Incorporated

7,705 -
DMTH15H053SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 66mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 11.5 nC @ 10 V 150 V ±20V 814 pF @ 75 V - - PowerDI5060-8 (Type UX) - 2.3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
AONH36334

AONH36334

MOSFET N-CH

Alpha & Omega Semiconductor Inc.

2,307 -
AONH36334

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
ZXMP7A17KQTC

ZXMP7A17KQTC

MOSFET P-CH 70V 3.8A TO252

Diodes Incorporated

2,421 -
ZXMP7A17KQTC

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.8A (Ta) 4.5V, 10V 160mOhm @ 2.1A, 10V Surface Mount 1V @ 250µA (Min) 18 nC @ 10 V 70 V ±20V 635 pF @ 40 V - - TO-252-3 - 2.11W (Ta) -55°C ~ 150°C (TJ)
FQP9N25C

FQP9N25C

MOSFET N-CH 250V 8.8A TO220-3

onsemi

3,186 -
FQP9N25C

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 250 V ±30V 710 pF @ 25 V - - TO-220-3 - 74W (Tc) -55°C ~ 150°C (TJ)
FQP9N25CTSTU

FQP9N25CTSTU

MOSFET N-CH 250V 8.8A TO220-3

onsemi

6,666 -
FQP9N25CTSTU

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 250 V ±30V 710 pF @ 25 V - - TO-220-3 - 74W (Tc) -55°C ~ 150°C (TJ)
SI5481DU-T1-E3

SI5481DU-T1-E3

MOSFET P-CH 20V 12A PPAK

Vishay Siliconix

5,773 -
SI5481DU-T1-E3

数据表

TrenchFET® PowerPAK® ChipFET™ Single Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 1.8V, 4.5V 22mOhm @ 6.5A, 4.5V Surface Mount 1V @ 250µA 50 nC @ 8 V 20 V ±8V 1610 pF @ 10 V - - PowerPAK® ChipFET™ Single - 3.1W (Ta), 17.8W (Tc) -55°C ~ 150°C (TJ)
SI5485DU-T1-E3

SI5485DU-T1-E3

MOSFET P-CH 20V 12A PPAK

Vishay Siliconix

6,866 -
SI5485DU-T1-E3

数据表

TrenchFET® PowerPAK® ChipFET™ Single Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 2.5V, 4.5V 25mOhm @ 5.9A, 4.5V Surface Mount 1.5V @ 250µA 42 nC @ 8 V 20 V ±12V 1100 pF @ 10 V - - PowerPAK® ChipFET™ Single - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ)
SI5486DU-T1-E3

SI5486DU-T1-E3

MOSFET N-CH 20V 12A CHIPFET

Vishay Siliconix

7,012 -
SI5486DU-T1-E3

数据表

TrenchFET® PowerPAK® ChipFET™ Single Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 1.8V, 4.5V 15mOhm @ 7.7A, 4.5V Surface Mount 1V @ 250µA 54 nC @ 8 V 20 V ±8V 2100 pF @ 10 V - - PowerPAK® ChipFET™ Single - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ)
SIA811DJ-T1-E3

SIA811DJ-T1-E3

MOSFET P-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix

4,461 -
SIA811DJ-T1-E3

数据表

LITTLE FOOT® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.5A (Tc) 1.8V, 4.5V 94mOhm @ 2.8A, 4.5V Surface Mount 1V @ 250µA 13 nC @ 8 V 20 V ±8V 355 pF @ 10 V - Schottky Diode (Isolated) PowerPAK® SC-70-6 Dual - 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ)
IXFM67N10

IXFM67N10

MOSFET N-CH 100V 67A TO204AE

IXYS

5,749 -
IXFM67N10

数据表

HiPerFET™ TO-204AE Tube Obsolete N-Channel MOSFET (Metal Oxide) 67A (Tc) 10V 25mOhm @ 33.5A, 10V Through Hole 4V @ 4mA 260 nC @ 10 V 100 V ±20V 4500 pF @ 25 V - - TO-204AE - 300W (Tc) -55°C ~ 150°C (TJ)
IXTM10P60

IXTM10P60

POWER MOSFET TO-3

IXYS

5,316 -
IXTM10P60

数据表

- - Tube Obsolete - - - - - - - - - - - - - - - - -
IXTM11N80

IXTM11N80

MOSFET N-CH 800V 11A TO204AA

IXYS

7,332 -
IXTM11N80

数据表

GigaMOS™ TO-204AA, TO-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 950mOhm @ 5.5A, 10V Through Hole 4.5V @ 250µA 170 nC @ 10 V 800 V ±20V 4500 pF @ 25 V - - TO-204AA (IXTM) - 300W (Tc) -55°C ~ 150°C (TJ)
IXTM12N100

IXTM12N100

MOSFET N-CH 1000V 12A TO204AA

IXYS

2,712 -
IXTM12N100

数据表

GigaMOS™ TO-204AA, TO-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 1.05Ohm @ 6A, 10V Through Hole 4.5V @ 250µA 170 nC @ 10 V 1000 V ±20V 4000 pF @ 25 V - - TO-204AA (IXTM) - 300W (Tc) -55°C ~ 150°C (TJ)
IXTM1630

IXTM1630

POWER MOSFET TO-3

IXYS

5,565 -
IXTM1630

数据表

- - Tube Obsolete - - - - - - - - - - - - - - - - -
IXTM21N50L

IXTM21N50L

POWER MOSFET TO-3

IXYS

9,690 -
IXTM21N50L

数据表

- - Tube Obsolete - - - - - - - - - - - - - - - - -
IXTM24N50L

IXTM24N50L

POWER MOSFET TO-3

IXYS

5,755 -
IXTM24N50L

数据表

- - Tube Obsolete - - - - - - - - - - - - - - - - -
IXTM40N30

IXTM40N30

MOSFET N-CH 300V 40A TO204AE

IXYS

5,705 -
IXTM40N30

数据表

GigaMOS™ TO-204AE Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 88mOhm @ 20A, 10V Through Hole 4V @ 250µA 220 nC @ 10 V 300 V ±20V 4600 pF @ 25 V - - TO-204AE - 300W (Tc) -55°C ~ 150°C (TJ)
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