富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PH3230S,115

PH3230S,115

MOSFET N-CH 30V 100A LFPAK

Nexperia USA Inc.

6,712 -
PH3230S,115

数据表

- SC-100, SOT-669 Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) - 3.2mOhm @ 25A, 10V Surface Mount 3V @ 1mA 42 nC @ 5 V 30 V - 4100 pF @ 10 V - - LFPAK56, Power-SO8 - - -
BUK9629-100B,118

BUK9629-100B,118

MOSFET N-CH 100V 46A D2PAK

Nexperia USA Inc.

1,600 -
BUK9629-100B,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 46A (Tc) 5V, 10V 27mOhm @ 25A, 10V Surface Mount 2V @ 1mA 33 nC @ 5 V 100 V ±15V 4360 pF @ 25 V AEC-Q101 - D2PAK Automotive 157W (Tc) -55°C ~ 175°C (TJ)
BUK7606-55B,118

BUK7606-55B,118

MOSFET N-CH 55V 75A D2PAK

Nexperia USA Inc.

11 -
BUK7606-55B,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 6mOhm @ 25A, 10V Surface Mount 4V @ 1mA 64 nC @ 10 V 55 V ±20V 5100 pF @ 25 V AEC-Q101 - D2PAK Automotive 254W (Tc) -55°C ~ 175°C (TJ)
PMPB14R0EPX

PMPB14R0EPX

MOSFET P-CH 30V 9A DFN2020M-6

Nexperia USA Inc.

2,193 -
PMPB14R0EPX

数据表

TrenchMOS™ 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Ta) - 16mOhm @ 8.5A, 10V Surface Mount 2V @ 250µA 40 nC @ 10 V 30 V ±20V 227 pF @ 15 V - - DFN2020MD-6 - 1.9W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PSMN4R8-100PSEQ

PSMN4R8-100PSEQ

MOSFET N-CH 100V 120A TO220AB

Nexperia USA Inc.

9,272 -
PSMN4R8-100PSEQ

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tj) 10V 5mOhm @ 25A, 10V Through Hole 4V @ 1mA 278 nC @ 10 V 100 V ±20V 14400 pF @ 50 V - - TO-220AB - 405W (Tc) -55°C ~ 175°C (TJ)
PSMN8R7-100YSFX

PSMN8R7-100YSFX

PSMN8R7-100YSF/SOT669/LFPAK

Nexperia USA Inc.

3,950 -
PSMN8R7-100YSFX

数据表

- - Tape & Reel (TR) Obsolete - - 90A (Tj) - - - - - - - - - - - - - -
PSMN063-150D,118

PSMN063-150D,118

MOSFET N-CH 150V 29A DPAK

Nexperia USA Inc.

7,468 -
PSMN063-150D,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 63mOhm @ 15A, 10V Surface Mount 4V @ 1mA 55 nC @ 10 V 150 V ±20V 2390 pF @ 25 V - - DPAK - 150W (Tc) -55°C ~ 175°C (TJ)
PH1730AL,115

PH1730AL,115

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

2,766 -
PH1730AL,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) - 1.7mOhm @ 15A, 10V Surface Mount 2.15V @ 1mA 77.9 nC @ 10 V 30 V - 5057 pF @ 12 V - - LFPAK56, Power-SO8 - - -
PSMN1R5-25YL,115

PSMN1R5-25YL,115

MOSFET N-CH 25V 100A LFPAK56

Nexperia USA Inc.

5,965 -
PSMN1R5-25YL,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 1.5mOhm @ 15A, 10V Surface Mount 2.15V @ 1mA 76 nC @ 10 V 25 V ±20V 4830 pF @ 12 V - - LFPAK56, Power-SO8 - 109W (Tc) -55°C ~ 150°C (TJ)
BUK763R6-40C,118

BUK763R6-40C,118

MOSFET N-CH 40V 100A D2PAK

Nexperia USA Inc.

4,706 -
BUK763R6-40C,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.6mOhm @ 25A, 10V Surface Mount 4V @ 1mA 97 nC @ 10 V 40 V ±20V 5708 pF @ 25 V AEC-Q101 - D2PAK Automotive 203W (Tc) -55°C ~ 175°C (TJ)
共 1184 条记录«上一页1... 5960616263646566...119下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户