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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK9Y14-40B,115

BUK9Y14-40B,115

MOSFET N-CH 40V 56A LFPAK56

Nexperia USA Inc.

7,280 -
BUK9Y14-40B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 5V 11mOhm @ 20A, 10V Surface Mount 2V @ 1mA 21 nC @ 5 V 40 V ±15V 1800 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 85W (Tc) -55°C ~ 175°C (TJ)
BUK7Y7R6-40EX

BUK7Y7R6-40EX

MOSFET N-CH 40V 79A LFPAK56

Nexperia USA Inc.

1,406 -
BUK7Y7R6-40EX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 79A (Tc) 10V 7.6mOhm @ 20A, 10V Surface Mount 4V @ 1mA 26.2 nC @ 10 V 40 V ±20V 1650 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 94.3W (Tc) -55°C ~ 175°C (TJ)
PSMN005-30K,518

PSMN005-30K,518

MOSFET N-CH 30V 20A 8SO

Nexperia USA Inc.

6,008 -
PSMN005-30K,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 5.5mOhm @ 15A, 10V Surface Mount 3V @ 1mA 34 nC @ 4.5 V 30 V ±20V 3100 pF @ 25 V - - 8-SO - 3.5W (Tc) -55°C ~ 150°C (TJ)
PSMN3R5-80ES,127

PSMN3R5-80ES,127

MOSFET N-CH 80V 120A I2PAK

Nexperia USA Inc.

2,313 -
PSMN3R5-80ES,127

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.5mOhm @ 25A, 10V Through Hole 4V @ 1mA 139 nC @ 10 V 80 V ±20V 9800 pF @ 30 V - - I2PAK - 338W (Tc) -55°C ~ 175°C (TJ)
PSMN5R0-100ES,127

PSMN5R0-100ES,127

MOSFET N-CH 100V 120A I2PAK

Nexperia USA Inc.

7,865 -
PSMN5R0-100ES,127

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 5mOhm @ 25A, 10V Through Hole 4V @ 1mA 170 nC @ 10 V 100 V ±20V 9900 pF @ 50 V - - I2PAK - 338W (Tc) -55°C ~ 175°C (TJ)
PSMN4R3-100ES,127

PSMN4R3-100ES,127

MOSFET N-CH 100V 120A I2PAK

Nexperia USA Inc.

6,385 -
PSMN4R3-100ES,127

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 4.3mOhm @ 25A, 10V Through Hole 4V @ 1mA 170 nC @ 10 V 100 V ±20V 9900 pF @ 50 V - - I2PAK - 338W (Tc) -55°C ~ 175°C (TJ)
BUK7M6R3-40EX

BUK7M6R3-40EX

MOSFET N-CH 40V 70A LFPAK33

Nexperia USA Inc.

2,958 -
BUK7M6R3-40EX

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 6.3mOhm @ 20A, 10V Surface Mount 4V @ 1mA 28.1 nC @ 10 V 40 V ±20V 1912 pF @ 25 V AEC-Q101 - LFPAK33 Automotive 79W (Tc) -55°C ~ 175°C (TJ)
BUK9Y7R6-40E,115

BUK9Y7R6-40E,115

MOSFET N-CH 40V 79A LFPAK56

Nexperia USA Inc.

2,815 -
BUK9Y7R6-40E,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 79A (Tc) 5V, 10V 6mOhm @ 20A, 10V Surface Mount 2.1V @ 1mA 16.4 nC @ 5 V 40 V ±10V 2403 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 95W (Tc) -55°C ~ 175°C (TJ)
PSMN8R9-100BSEJ

PSMN8R9-100BSEJ

MOSFET N-CH 100V 108A D2PAK

Nexperia USA Inc.

5,367 -
PSMN8R9-100BSEJ

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 10mOhm @ 25A, 1V Surface Mount 4V @ 1mA 160 nC @ 10 V 100 V ±20V 9488 pF @ 50 V - - D2PAK - 296W (Tc) -55°C ~ 175°C (TJ)
PSMN5R0-80PS,127

PSMN5R0-80PS,127

MOSFET N-CH 80V 100A TO220AB

Nexperia USA Inc.

8,223 -
PSMN5R0-80PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.7mOhm @ 15A, 10V Through Hole 4V @ 1mA 101 nC @ 10 V 80 V ±20V 6793 pF @ 12 V - - TO-220AB - 270W (Tc) -55°C ~ 175°C (TJ)
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