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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRL40B209

IRL40B209

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

7,716 -
IRL40B209

数据表

HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 4.5V, 10V 1.25mOhm @ 100A, 10V Through Hole 2.4V @ 250µA 270 nC @ 4.5 V 40 V ±20V 15140 pF @ 25 V - - TO-220AB - 375W (Tc) -55°C ~ 175°C (TJ)
IRL40B212

IRL40B212

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

9,572 -
IRL40B212

数据表

HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V Through Hole 2.4V @ 150µA 137 nC @ 4.5 V 40 V ±20V 8320 pF @ 25 V - - TO-220AB - 231W (Tc) -55°C ~ 175°C (TJ)
IRL40S212

IRL40S212

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

6,715 -
IRL40S212

数据表

StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V Surface Mount 2.4V @ 150µA 137 nC @ 4.5 V 40 V ±20V 8320 pF @ 25 V - - PG-TO263-3 - 231W (Tc) -55°C ~ 175°C (TJ)
IRL60B216

IRL60B216

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies

2,857 -
IRL60B216

数据表

HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V Through Hole 2.4V @ 250µA 258 nC @ 4.5 V 60 V ±20V 15570 pF @ 25 V - - TO-220AB - 375W (Tc) -55°C ~ 175°C (TJ)
HAT2192WP-EL-E

HAT2192WP-EL-E

MOSFET N-CH 250V 10A 8WPAK

Renesas Electronics Corporation

8,141 -
HAT2192WP-EL-E

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 230mOhm @ 5A, 10V Surface Mount - 15 nC @ 10 V 250 V ±30V 710 pF @ 25 V - - 8-WPAK (3) - 25W (Tc) 150°C (TJ)
RJK0629DPE-00#J3

RJK0629DPE-00#J3

MOSFET N-CH 60V 85A 4LDPAK

Renesas Electronics Corporation

6,135 -
RJK0629DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 85A (Ta) 4.5V, 10V 4.5mOhm @ 43A, 10V Surface Mount - 85 nC @ 10 V 60 V ±20V 4100 pF @ 10 V - - LDPAK - 100W (Tc) 150°C (TJ)
IPD60R520CPATMA1

IPD60R520CPATMA1

MOSFET N-CH 600V 6.8A TO252-3

Infineon Technologies

4,253 -
IPD60R520CPATMA1

数据表

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V Surface Mount 3.5V @ 250µA 31 nC @ 10 V 600 V ±20V 630 pF @ 100 V - - PG-TO252-3 - 66W (Tc) -55°C ~ 150°C (TJ)
IPD60R600CPATMA1

IPD60R600CPATMA1

MOSFET N-CH 600V 6.1A TO252-3

Infineon Technologies

8,860 -
IPD60R600CPATMA1

数据表

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V Surface Mount 3.5V @ 220µA 27 nC @ 10 V 600 V ±20V 550 pF @ 100 V - - PG-TO252-3 - 60W (Tc) -55°C ~ 150°C (TJ)
IPP052NE7N3GHKSA1

IPP052NE7N3GHKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies

5,541 -
IPP052NE7N3GHKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5.2mOhm @ 80A, 10V Through Hole 3.8V @ 91µA 68 nC @ 10 V 75 V ±20V 4750 pF @ 37.5 V - - PG-TO220-3 - 150W (Tc) -55°C ~ 175°C (TJ)
FDD9407L-F085

FDD9407L-F085

MOSFET N-CH 40V 100A DPAK

onsemi

7,128 -
FDD9407L-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.4mOhm @ 80A, 4.5V Surface Mount 3V @ 250µA 125 nC @ 10 V 40 V ±20V 6700 pF @ 25 V AEC-Q101 - TO-252AA Automotive 227W (Tj) -55°C ~ 175°C (TJ)
DMP4026LSS-13

DMP4026LSS-13

MOSFET BVDSS: 31V~40V SO-8 T&R 2

Diodes Incorporated

9,063 -
DMP4026LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.2A (Ta) 4.5V, 10V 25mOhm @ 3A, 10V Surface Mount 1.8V @ 250µA 45 nC @ 10 V 40 V ±20V 2083 pF @ 20 V - - 8-SO - 1.5W (Ta) -55°C ~ 150°C (TJ)
DMP2021UFDF-13

DMP2021UFDF-13

MOSFET P-CH 20V 9A 6UDFN

Diodes Incorporated

6,051 -
DMP2021UFDF-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Ta) 1.5V, 4.5V 16mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 59 nC @ 8 V 20 V ±8V 2760 pF @ 15 V - - U-DFN2020-6 (Type F) - 730mW (Ta) -55°C ~ 150°C (TJ)
QS5U23TR

QS5U23TR

MOSFET P-CH 20V 1.5A TSMT5

Rohm Semiconductor

9,069 -
QS5U23TR

数据表

- SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 2.5V, 4.5V 200mOhm @ 1.5A, 4.5V Surface Mount 2V @ 1mA 4.2 nC @ 4.5 V 20 V ±12V 325 pF @ 10 V - Schottky Diode (Isolated) TSMT5 - 1.25W (Ta) 150°C (TJ)
DMNH6069SFVW-7

DMNH6069SFVW-7

MOSFET BVDSS: 41V~60V POWERDI333

Diodes Incorporated

9,194 -
DMNH6069SFVW-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta), 18A (Tc) 4.5V, 10V 50mOhm @ 3A, 10V Surface Mount, Wettable Flank 3V @ 250µA 14 nC @ 10 V 60 V ±20V 740 pF @ 30 V - - PowerDI3333-8 (SWP) Type UX - 3W (Ta) -55°C ~ 175°C (TJ)
DI050P03PT

DI050P03PT

MOSFET POWERQFN 3X3 P -30V

Diotec Semiconductor

8,760 -
DI050P03PT

数据表

- 8-PowerVDFN Bulk Active P-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 70 nC @ 10 V 30 V ±20V 3721 pF @ 15 V - - 8-QFN (3x3) - 39W (Tc) -55°C ~ 150°C (TJ)
IRFL014PBF

IRFL014PBF

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix

6,219 -
IRFL014PBF

数据表

- TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.7A (Tc) 10V 200mOhm @ 1.6A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 60 V ±20V 300 pF @ 25 V - - SOT-223 - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ)
IRFL110PBF

IRFL110PBF

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix

2,816 -
IRFL110PBF

数据表

- TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 10V 540mOhm @ 900mA, 10V Surface Mount 4V @ 250µA 8.3 nC @ 10 V 100 V ±20V 180 pF @ 25 V - - SOT-223 - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ)
IRLL110PBF

IRLL110PBF

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix

9,425 -
IRLL110PBF

数据表

- TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 4V, 5V 540mOhm @ 900mA, 5V Surface Mount 2V @ 250µA 6.1 nC @ 5 V 100 V ±10V 250 pF @ 25 V - - SOT-223 - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ)
EFC4619R-A-TR

EFC4619R-A-TR

MOSFET N-CH 24V 6A EFCP

onsemi

4,675 -
EFC4619R-A-TR

数据表

- 4-XFBGA, FCBGA Tape & Reel (TR) Not For New Designs - - - - - Surface Mount - - - - - - - EFCP1616-4CE-022 - - 150°C (TJ)
IPC028N03L3X1SA1

IPC028N03L3X1SA1

MOSFET N-CH 30V 2A SAWN ON FOIL

Infineon Technologies

9,101 -
IPC028N03L3X1SA1

数据表

OptiMOS™ 3 Die Bulk Active N-Channel MOSFET (Metal Oxide) - 10V 50mOhm @ 2A, 10V Surface Mount 2.2V @ 250µA - 30 V - - - - Sawn on foil - - -
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