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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AOTF11C60PL

AOTF11C60PL

MOSFET N-CH 600V 11A TO220-3F

Alpha & Omega Semiconductor Inc.

9,793 -
AOTF11C60PL

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 50 nC @ 10 V 600 V ±30V 2333 pF @ 100 V - - TO-220F - 37W (Tc) -55°C ~ 150°C (TJ)
AOTF20C60PL

AOTF20C60PL

MOSFET N-CH 600V 20A TO220-3F

Alpha & Omega Semiconductor Inc.

5,728 -
AOTF20C60PL

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 250mOhm @ 10A, 10V Through Hole 5V @ 250µA 80 nC @ 10 V 600 V ±30V 3607 pF @ 100 V - - TO-220F - 45W (Tc) -55°C ~ 150°C (TJ)
AOI2606

AOI2606

MOSFET N-CH 60V 14A/46A TO251A

Alpha & Omega Semiconductor Inc.

5,262 -
AOI2606

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 46A (Tc) 10V 6.8mOhm @ 20A, 10V Through Hole 3.5V @ 250µA 75 nC @ 10 V 60 V ±20V 4050 pF @ 30 V - - TO-251A - 2.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
AOI2610

AOI2610

MOSFET N-CH 60V 10A/46A TO251A

Alpha & Omega Semiconductor Inc.

7,124 -
AOI2610

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta), 46A (Tc) 4.5V, 10V 10.7mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 30 nC @ 10 V 60 V ±20V 2007 pF @ 30 V - - TO-251A - 2.5W (Ta), 71.5W (Tc) -55°C ~ 175°C (TJ)
AOI2614

AOI2614

MOSFET N-CH 60V 13A/35A TO251A

Alpha & Omega Semiconductor Inc.

9,834 -
AOI2614

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 35A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 30 nC @ 10 V 60 V ±20V 1340 pF @ 30 V - - TO-251A - 6.2W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
AOW2502

AOW2502

MOSFET N-CH 150V 16A/106A TO262

Alpha & Omega Semiconductor Inc.

9,800 -
AOW2502

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 106A (Tc) 10V 10.7mOhm @ 20A, 10V Through Hole 5.1V @ 250µA 60 nC @ 10 V 150 V ±20V 3010 pF @ 75 V - - TO-262 - 6.2W (Ta), 277W (Tc) -55°C ~ 150°C (TJ)
AOW292

AOW292

MOSFET N-CH 100V 105A TO262

Alpha & Omega Semiconductor Inc.

9,500 -
AOW292

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 14.5A (Ta), 105A (Tc) 10V 4.1mOhm @ 20A, 10V Through Hole 3.4V @ 250µA 126 nC @ 10 V 100 V ±20V 6775 pF @ 50 V - - TO-262 - 1.9W (Ta), 300W (Tc) -55°C ~ 175°C (TJ)
IRL8114PBF

IRL8114PBF

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies

8,098 -
IRL8114PBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 4.5mOhm @ 40A, 10V Through Hole 2.25V @ 250µA 29 nC @ 4.5 V 30 V ±20V 2660 pF @ 15 V - - TO-220AB - 115W (Tc) -55°C ~ 175°C (TJ)
ES6U41T2R

ES6U41T2R

MOSFET N-CH 30V 1.5A 6WEMT

Rohm Semiconductor

9,991 -
ES6U41T2R

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 2.5V, 4.5V 240mOhm @ 1.5A, 4.5V Surface Mount 1.5V @ 1mA 2.2 nC @ 4.5 V 30 V ±12V 80 pF @ 10 V - Schottky Diode (Isolated) 6-WEMT - 700mW (Ta) 150°C (TJ)
IPA80R1K0CEXKSA1

IPA80R1K0CEXKSA1

MOSFET N-CH 800V 3.6A TO220

Infineon Technologies

7,662 -
IPA80R1K0CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 950mOhm @ 3.6A, 10V Through Hole 3.9V @ 250µA 31 nC @ 10 V 800 V ±20V 785 pF @ 100 V - - PG-TO220-FP - 32W (Tc) -40°C ~ 150°C (TJ)
IPA80R310CEXKSA1

IPA80R310CEXKSA1

MOSFET N-CH 800V 6.8A TO220

Infineon Technologies

6,338 -
IPA80R310CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 6.8A (Tc) - 310mOhm @ 11A, 10V Through Hole 3.9V @ 1mA 91 nC @ 10 V 800 V - 2320 pF @ 100 V - - PG-TO220-FP - 35W (Tc) -40°C ~ 150°C (TJ)
IPS65R1K5CEAKMA1

IPS65R1K5CEAKMA1

MOSFET N-CH 650V 3.1A TO251

Infineon Technologies

6,705 -
IPS65R1K5CEAKMA1

数据表

CoolMOS™ CE TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.1A (Tc) 10V 1.5Ohm @ 1A, 10V Through Hole 3.5V @ 100µA 10.5 nC @ 10 V 650 V ±20V 225 pF @ 100 V - - TO-251 - 28W (Tc) -40°C ~ 150°C (TJ)
IPA60R460CEXKSA1

IPA60R460CEXKSA1

MOSFET N-CH 600V 9.1A TO220-FP

Infineon Technologies

4,510 -
IPA60R460CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.1A (Tc) 10V 460mOhm @ 3.4A, 10V Through Hole 3.5V @ 280µA 28 nC @ 10 V 600 V ±20V 620 pF @ 100 V - - PG-TO220-FP - 30W (Tc) -40°C ~ 150°C (TJ)
IPA60R800CEXKSA1

IPA60R800CEXKSA1

MOSFET N-CH 600V 5.6A TO220-FP

Infineon Technologies

8,438 -
IPA60R800CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.6A (Tc) 10V 800mOhm @ 2A, 10V Through Hole 3.5V @ 170µA 17.2 nC @ 10 V 600 V ±20V 373 pF @ 100 V - - PG-TO220-FP - 27W (Tc) -40°C ~ 150°C (TJ)
IPA80R1K4CEXKSA1

IPA80R1K4CEXKSA1

MOSFET N-CH 800V 2.8A TO220

Infineon Technologies

2,659 -
IPA80R1K4CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 1.4Ohm @ 2.3A, 10V Through Hole 3.9V @ 240µA 23 nC @ 10 V 800 V ±20V 570 pF @ 100 V - - PG-TO220-FP - 31W (Tc) -40°C ~ 150°C (TJ)
IPA80R460CEXKSA1

IPA80R460CEXKSA1

MOSFET N-CH 800V 5A TO220

Infineon Technologies

9,983 -
IPA80R460CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 460mOhm @ 7.1A, 10V Through Hole 3.9V @ 680µA 64 nC @ 10 V 800 V ±20V 1600 pF @ 100 V - - PG-TO220-FP - 34W (Tc) -40°C ~ 150°C (TJ)
IPA80R650CEXKSA1

IPA80R650CEXKSA1

MOSFET N-CH 800V 4.5A TO220

Infineon Technologies

7,936 -
IPA80R650CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 650mOhm @ 5.1A, 10V Through Hole 3.9V @ 470µA 45 nC @ 10 V 800 V ±20V 1100 pF @ 100 V - - PG-TO220-FP - 33W (Tc) -40°C ~ 150°C (TJ)
IPU60R1K0CEBKMA1

IPU60R1K0CEBKMA1

MOSFET N-CH 600V 4.3A TO251

Infineon Technologies

7,731 -
IPU60R1K0CEBKMA1

数据表

CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V Through Hole 3.5V @ 130µA 13 nC @ 10 V 600 V ±20V 280 pF @ 100 V - - TO-251 - 37W (Tc) -40°C ~ 150°C (TJ)
DMN4010LFG-13

DMN4010LFG-13

MOSFET N-CH 40V 11.5A PWRDI3333

Diodes Incorporated

4,179 -
DMN4010LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 4.5V, 10V 12mOhm @ 14A, 10V Surface Mount 3V @ 250µA 37 nC @ 10 V 40 V ±20V 1810 pF @ 20 V - - POWERDI3333-8 - 930mW (Ta) -55°C ~ 150°C (TJ)
DMT3009LFVW-13

DMT3009LFVW-13

MOSFET N-CH 30V 12A PWRDI3333

Diodes Incorporated

2,869 -
DMT3009LFVW-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 50A (Tc) 3.8V, 10V 11mOhm @ 14.4A, 10V Surface Mount, Wettable Flank 3V @ 250µA 12 nC @ 10 V 30 V ±20V 823 pF @ 15 V - - PowerDI3333-8 (SWP) Type UX - 2.3W (Ta) -55°C ~ 150°C (TJ)
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