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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RSD221N06TL

RSD221N06TL

MOSFET N-CH 60V 22A CPT3

Rohm Semiconductor

7,599 -
RSD221N06TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 22A (Tc) 4V, 10V 26mOhm @ 22A, 10V Surface Mount 3V @ 1mA 30 nC @ 10 V 60 V ±20V 1500 pF @ 10 V - - CPT3 - 850mW (Ta), 20W (Tc) 150°C (TJ)
RSJ300N10TL

RSJ300N10TL

MOSFET N-CH 100V 30A LPTS

Rohm Semiconductor

2,319 -
RSJ300N10TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 4V, 10V 52mOhm @ 15A, 10V Surface Mount 2.5V @ 1mA 50 nC @ 10 V 100 V ±20V 2200 pF @ 25 V - - LPTS - 50W (Tc) 150°C (TJ)
ES6U42T2R

ES6U42T2R

MOSFET P-CH 20V 1A 6WEMT

Rohm Semiconductor

2,798 -
ES6U42T2R

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1A (Ta) 2.5V, 4.5V 390mOhm @ 1A, 4.5V Surface Mount 2V @ 1mA 2.1 nC @ 4.5 V 20 V ±12V 150 pF @ 10 V - Schottky Diode (Body) 6-WEMT - 700mW (Ta) 150°C (TJ)
RUE002N05TL

RUE002N05TL

MOSFET N-CH 50V 200MA EMT3

Rohm Semiconductor

5,032 -
RUE002N05TL

数据表

- SC-75, SOT-416 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 1.2V, 4.5V 2.2Ohm @ 200mA, 4.5V Surface Mount 1V @ 1mA - 50 V ±8V 25 pF @ 10 V - - EMT3 - 150mW (Ta) 150°C (TJ)
RW1C015UNT2R

RW1C015UNT2R

MOSFET N-CH 20V 1.5A 6WEMT

Rohm Semiconductor

6,768 -
RW1C015UNT2R

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 1.5V, 4.5V 180mOhm @ 1.5A, 4.5V Surface Mount 1V @ 1mA 1.8 nC @ 4.5 V 20 V ±10V 110 pF @ 10 V - - 6-WEMT - 400mW (Ta) 150°C (TJ)
TT8U2TCR

TT8U2TCR

MOSFET P-CH 20V 2.4A 8TSST

Rohm Semiconductor

8,745 -
TT8U2TCR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.4A (Ta) 1.5V, 4.5V 105mOhm @ 2.4A, 4.5V Surface Mount 1V @ 1mA 6.7 nC @ 4.5 V 20 V ±10V 850 pF @ 10 V - Schottky Diode (Isolated) 8-TSST - 1.25W (Ta) 150°C (TJ)
SCH2080KEC

SCH2080KEC

SICFET N-CH 1200V 40A TO247

Rohm Semiconductor

5,423 -
SCH2080KEC

数据表

- TO-247-3 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 40A (Tc) 18V 117mOhm @ 10A, 18V Through Hole 4V @ 4.4mA 106 nC @ 18 V 1200 V +22V, -6V 1850 pF @ 800 V - - TO-247 - 262W (Tc) 175°C (TJ)
BUK7C1R2-40EJ

BUK7C1R2-40EJ

MOSFET N-CH 40V D2PAK-7

NXP USA Inc.

6,878 -
BUK7C1R2-40EJ

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 40 V - - - - D2PAK-7 - - -
BUK7C5R4-100EJ

BUK7C5R4-100EJ

MOSFET N-CH 100V D2PAK-7

NXP USA Inc.

8,120 -
BUK7C5R4-100EJ

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 100 V - - - - D2PAK-7 - - -
BUK9C2R2-60EJ

BUK9C2R2-60EJ

MOSFET N-CH 60V D2PAK-7

NXP USA Inc.

9,970 -
BUK9C2R2-60EJ

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 60 V - - - - D2PAK-7 - - -
BUK7Y15-100EX

BUK7Y15-100EX

MOSFET N-CH 100V 68A LFPAK56

Nexperia USA Inc.

7,488 -
BUK7Y15-100EX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 68A (Tc) 10V 15mOhm @ 20A, 10V Surface Mount 4V @ 1mA 54.5 nC @ 10 V 100 V ±20V 3958 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 195W (Tc) -55°C ~ 175°C (TJ)
BUK9Y12-80E,115

BUK9Y12-80E,115

MOSFET N-CH 80V LFPAK56 PWR-SO8

Nexperia USA Inc.

5,531 -
BUK9Y12-80E,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 80 V - - - - LFPAK56, Power-SO8 - - -
PMF77XN,115

PMF77XN,115

MOSFET N-CH 30V 1.5A SOT323-3

NXP USA Inc.

3,191 -
PMF77XN,115

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 2.5V, 4.5V 97mOhm @ 1.5A, 4.5V Surface Mount 1.5V @ 250µA 2.9 nC @ 4.5 V 30 V ±12V 170 pF @ 15 V - - SC-70 - 270mW (Ta), 1.92W (Tc) -55°C ~ 150°C (TJ)
PMN22XN,115

PMN22XN,115

MOSFET N-CH 30V 5.7A 6TSOP

NXP USA Inc.

5,363 -
PMN22XN,115

数据表

- SC-74, SOT-457 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.7A (Ta) 2.5V, 4.5V 27mOhm @ 5.7A, 4.5V Surface Mount 1.5V @ 250µA 10 nC @ 4.5 V 30 V ±12V 585 pF @ 15 V - - SC-74 - 545mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
PMPB20UN,115

PMPB20UN,115

MOSFET N-CH 20V 6.6A 6DFN

NXP USA Inc.

7,244 -
PMPB20UN,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.6A (Ta) 1.8V, 4.5V 25mOhm @ 6.6A, 4.5V Surface Mount 1V @ 250µA 7.1 nC @ 4.5 V 20 V ±8V 460 pF @ 10 V - - 6-DFN2020MD (2x2) - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PMZB290UN,315

PMZB290UN,315

MOSFET N-CH 20V 1A DFN1006B-3

Nexperia USA Inc.

2,132 -
PMZB290UN,315

数据表

- 3-XFDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 1A (Ta) 1.8V, 4.5V 380mOhm @ 500mA, 4.5V Surface Mount 950mV @ 250µA 0.68 nC @ 4.5 V 20 V ±8V 83 pF @ 10 V - - DFN1006B-3 - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ)
2SK1339-E

2SK1339-E

MOSFET N-CH 900V 3A TO3P

Renesas Electronics Corporation

2,929 -
2SK1339-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 7Ohm @ 1.5A, 10V Through Hole - - 900 V ±30V 425 pF @ 10 V - - TO-3P - 80W (Tc) 150°C (TJ)
2SK1340-E

2SK1340-E

MOSFET N-CH 900V 5A TO3P

Renesas Electronics Corporation

6,248 -
2SK1340-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 4Ohm @ 3A, 10V Through Hole - - 900 V ±30V 740 pF @ 10 V - - TO-3P - 100W (Tc) 150°C (TJ)
2SK1341-E

2SK1341-E

MOSFET N-CH 900V 6A TO3P

Renesas Electronics Corporation

4,455 -
2SK1341-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 3Ohm @ 3A, 10V Through Hole - - 900 V ±30V 980 pF @ 10 V - - TO-3P - 100W (Tc) 150°C (TJ)
2SK1342-E

2SK1342-E

MOSFET N-CH 900V 8A TO3P

Renesas Electronics Corporation

9,531 -
2SK1342-E

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 1.6Ohm @ 4A, 10V Through Hole - - 900 V ±30V 1730 pF @ 10 V - - TO-3P - 100W (Tc) 150°C (TJ)
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