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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMP3096L-13

DMP3096L-13

MOSFET BVDSS: 25V~30V SOT23 T&R

Diodes Incorporated

8,585 -
DMP3096L-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.4A (Ta) 4.5V, 10V 70mOhm @ 3.8A, 10V Surface Mount 2.1V @ 250µA 7.5 nC @ 10 V 30 V ±20V 366 pF @ 25 V - - SOT-23-3 - 800mW (Ta) -55°C ~ 150°C (TJ)
DMN601LTQ-13

DMN601LTQ-13

2N7002 FAMILY SOT523 T&R 10K

Diodes Incorporated

5,171 -
DMN601LTQ-13

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 356mA (Ta) 5V, 10V 2Ohm @ 200mA, 10V Surface Mount 2.5V @ 250µA 1.3 nC @ 10 V 60 V ±20V 47 pF @ 30 V AEC-Q101 - SOT-523 Automotive 400mW (Ta) -55°C ~ 150°C (TJ)
DMN62D1SFBWQ-7B

DMN62D1SFBWQ-7B

LINEAR IC

Diodes Incorporated

6,100 -
DMN62D1SFBWQ-7B

数据表

- 3-UFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 538mA (Ta) 4.5V, 10V 1.4Ohm @ 40mA, 10V Surface Mount, Wettable Flank 2.3V @ 250µA 1.4 nC @ 10 V 60 V ±20V 43 pF @ 40 V AEC-Q101 - U-DFN1006-3/SWP (Type UX) Automotive 500mW (Ta) -55°C ~ 150°C (TJ)
AUIRF3315S

AUIRF3315S

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies

3,303 -
AUIRF3315S

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 82mOhm @ 12A, 10V Surface Mount 4V @ 250µA 95 nC @ 10 V 150 V ±20V 1300 pF @ 25 V - - D2PAK - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ)
AUIRF3415

AUIRF3415

MOSFET N-CH 150V 43A TO220AB

Infineon Technologies

7,149 -
AUIRF3415

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 42mOhm @ 22A, 10V Through Hole 4V @ 250µA 200 nC @ 10 V 150 V ±20V 2400 pF @ 25 V - - TO-220AB - 200W (Tc) -55°C ~ 175°C (TJ)
DMN62D2UQ-13

DMN62D2UQ-13

2N7002 FAMILY SOT23 T&R 10K

Diodes Incorporated

4,990 -
DMN62D2UQ-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 390mA (Ta) 1.8V, 5V 2Ohm @ 50mA, 5V Surface Mount 1V @ 250µA 0.8 nC @ 10 V 60 V ±20V 41 pF @ 30 V AEC-Q101 - SOT-23-3 Automotive 500mW (Ta) -55°C ~ 150°C (TJ)
A2N7002HL-HF

A2N7002HL-HF

MOSFET N-CH 60V 300MA DFN1006-3

Comchip Technology

4,648 -
A2N7002HL-HF

数据表

- SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300mA (Ta) - 2.5Ohm @ 500mA, 10V Surface Mount 2.5V @ 250µA - 60 V ±20V 41 pF @ 20 V AEC-Q101 - DFN1006-3 Automotive 150mW (Ta) -55°C ~ 150°C (TJ)
DMN2991UFZQ-7B

DMN2991UFZQ-7B

MOSFET BVDSS: 8V~24V X2-DFN0606-

Diodes Incorporated

6,273 -
DMN2991UFZQ-7B

数据表

- 3-XFDFN Bulk Active N-Channel MOSFET (Metal Oxide) 550mA (Ta) 1.5V, 4.5V 990mOhm @ 100mA, 4.5V Surface Mount 1V @ 250µA 0.28 nC @ 4.5 V 20 V ±8V 14.6 pF @ 16 V AEC-Q101 - X2-DFN0606-3 Automotive 450mW (Ta) -55°C ~ 150°C (TJ)
DMN31D5UFZQ-7B

DMN31D5UFZQ-7B

MOSFET BVDSS: 25V~30V X2-DFN0606

Diodes Incorporated

7,419 -
DMN31D5UFZQ-7B

数据表

- 3-XFDFN Bulk Active N-Channel MOSFET (Metal Oxide) 410mA (Ta) 1.5V, 4.5V 1.5Ohm @ 100mA, 4.5V Surface Mount 1V @ 250µA 0.38 nC @ 4.5 V 30 V ±12V 22.6 pF @ 15 V AEC-Q101 - X2-DFN0606-3 Automotive 400mW (Ta) -55°C ~ 150°C (TJ)
DMN52D0U-13

DMN52D0U-13

MOSFET BVDSS: 41V~60V SOT23 T&R

Diodes Incorporated

8,279 -
DMN52D0U-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400mA (Ta) 1.8V, 5V 2Ohm @ 50mA, 5V Surface Mount 1V @ 250µA 1.5 nC @ 10 V 50 V ±12V 39 pF @ 25 V - - SOT-23-3 - 500mW -55°C ~ 150°C (TJ)
AUIRF3504

AUIRF3504

MOSFET N-CH 40V 87A TO220AB

Infineon Technologies

7,833 -
AUIRF3504

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 87A (Tc) 10V 9.2mOhm @ 52A, 10V Through Hole 4V @ 100µA 54 nC @ 10 V 40 V ±20V 2150 pF @ 25 V - - TO-220AB - 143W (Tc) -55°C ~ 175°C (TJ)
AUIRF3808S

AUIRF3808S

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies

7,718 -
AUIRF3808S

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 106A (Tc) 10V 7mOhm @ 82A, 10V Surface Mount 4V @ 250µA 220 nC @ 10 V 75 V ±20V 5310 pF @ 25 V - - D2PAK - 200W (Tc) -55°C ~ 175°C (TJ)
DMP2900UWQ-13

DMP2900UWQ-13

MOSFET BVDSS: 8V~24V SOT323 T&R

Diodes Incorporated

9,136 -
DMP2900UWQ-13

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 600mA (Ta) 1.8V, 4.5V 750mOhm @ 430mA, 4.5V Surface Mount 1V @ 250µA 0.0007 nC @ 4.5 V 20 V ±6V 49 pF @ 16 V AEC-Q101 - SOT-323 Automotive 300mW -55°C ~ 150°C (TJ)
AUIRF4905L

AUIRF4905L

MOSFET P-CH 55V 42A TO262

Infineon Technologies

5,091 -
AUIRF4905L

数据表

HEXFET® TO-262 Tube Obsolete P-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 20mOhm @ 42A, 10V Through Hole 4V @ 250µA 180 nC @ 10 V 55 V ±20V 3500 pF @ 25 V - - TO-262 - 200W (Tc) -55°C ~ 150°C (TJ)
AUIRF7478Q

AUIRF7478Q

MOSFET N-CH 60V 7A 8SO

Infineon Technologies

8,305 -
AUIRF7478Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 26mOhm @ 4.2A, 10V Surface Mount 3V @ 250µA 31 nC @ 4.5 V 60 V ±20V 1740 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRF9540N

AUIRF9540N

MOSFET P-CH 100V 23A TO220

Infineon Technologies

8,250 -
AUIRF9540N

数据表

- TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 117mOhm @ 11A, 10V Through Hole 4V @ 250µA 97 nC @ 10 V 100 V ±20V 1300 pF @ 25 V AEC-Q101 - TO-220AB Automotive 140W (Tc) -55°C ~ 175°C (TJ)
AUIRF9Z34N

AUIRF9Z34N

MOSFET P-CH 55V 19A TO220AB

Infineon Technologies

6,335 -
AUIRF9Z34N

数据表

HEXFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 100mOhm @ 10A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 55 V ±20V 620 pF @ 25 V AEC-Q101 - TO-220AB Automotive 68W (Tc) -55°C ~ 175°C (TJ)
AUIRFL014N

AUIRFL014N

MOSFET N-CH 55V 1.5A SOT-223

Infineon Technologies

4,927 -
AUIRFL014N

数据表

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 10V 160mOhm @ 1.9A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 55 V ±20V 190 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AUIRFL024N

AUIRFL024N

MOSFET N-CH 55V 2.8A SOT-223

Infineon Technologies

3,628 -
AUIRFL024N

数据表

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V Surface Mount 4V @ 250µA 18.3 nC @ 10 V 55 V ±20V 400 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AUIRFP064N

AUIRFP064N

MOSFET N-CH 55V 110A TO247AC

Infineon Technologies

9,360 -
AUIRFP064N

数据表

HEXFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 8mOhm @ 59A, 10V Through Hole 4V @ 250µA 170 nC @ 10 V 55 V ±20V 4000 pF @ 25 V - - TO-247AC - 200W (Tc) -55°C ~ 175°C (TJ)
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