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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R5009FNX

R5009FNX

MOSFET N-CH 500V 9A TO220FM

Rohm Semiconductor

5,311 -
R5009FNX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 840mOhm @ 4.5A, 10V Through Hole 4V @ 1mA 18 nC @ 10 V 500 V ±30V 630 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
R6012FNX

R6012FNX

MOSFET N-CH 600V 12A TO220FM

Rohm Semiconductor

8,634 -
R6012FNX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 510mOhm @ 6A, 10V Through Hole 5V @ 1mA 35 nC @ 10 V 600 V ±30V 1300 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
IRFSL4510PBF

IRFSL4510PBF

MOSFET N-CH 100V 61A TO262

Infineon Technologies

9,236 -
IRFSL4510PBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 61A (Tc) 10V 13.9mOhm @ 37A, 10V Through Hole 4V @ 100µA 87 nC @ 10 V 100 V ±20V 3180 pF @ 50 V - - TO-262 - 140W (Tc) -55°C ~ 175°C (TJ)
IRFR4510PBF

IRFR4510PBF

MOSFET N CH 100V 56A DPAK

Infineon Technologies

2,280 -
IRFR4510PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 13.9mOhm @ 38A, 10V Surface Mount 4V @ 100µA 81 nC @ 10 V 100 V ±20V 3031 pF @ 50 V - - TO-252AA (DPAK) - 143W (Tc) -55°C ~ 175°C (TJ)
IRFS4510PBF

IRFS4510PBF

MOSFET N-CH 100V 61A D2PAK

Infineon Technologies

5,692 -
IRFS4510PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 61A (Tc) 10V 13.9mOhm @ 37A, 10V Surface Mount 4V @ 100µA 87 nC @ 10 V 100 V ±20V 3180 pF @ 50 V - - PG-TO263-3 - 140W (Tc) -55°C ~ 175°C (TJ)
IRFI4510GPBF

IRFI4510GPBF

MOSFET N CH 100V 35A TO220

Infineon Technologies

3,619 -
IRFI4510GPBF

数据表

HEXFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 13.5mOhm @ 21A, 10V Through Hole 4V @ 100µA 81 nC @ 10 V 100 V ±20V 2998 pF @ 50 V - - TO-220AB Full-Pak - 42W (Tc) -55°C ~ 175°C (TJ)
AUIRF1404STRL

AUIRF1404STRL

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies

7,020 -
AUIRF1404STRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4mOhm @ 95A, 10V Surface Mount 4V @ 250µA 200 nC @ 10 V 40 V ±20V 7360 pF @ 25 V - - D2PAK - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
AUIRF3315STRL

AUIRF3315STRL

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies

6,245 -
AUIRF3315STRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 82mOhm @ 12A, 10V Surface Mount 4V @ 250µA 95 nC @ 10 V 150 V ±20V 1300 pF @ 25 V - - D2PAK - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ)
AUIRF7207QTR

AUIRF7207QTR

MOSFET P-CH 20V 5.4A 8SO

Infineon Technologies

8,164 -
AUIRF7207QTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.4A (Ta) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V Surface Mount 1.6V @ 250µA 22 nC @ 4.5 V 20 V ±12V 780 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRF7416QTR

AUIRF7416QTR

MOSFET P-CH 30V 10A 8SO

Infineon Technologies

4,085 -
AUIRF7416QTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 20mOhm @ 5.6A, 10V Surface Mount 2.04V @ 250µA 92 nC @ 10 V 30 V ±20V 1700 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRF7478QTR

AUIRF7478QTR

MOSFET N-CH 60V 7A 8SO

Infineon Technologies

9,934 -
AUIRF7478QTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 26mOhm @ 4.2A, 10V Surface Mount 3V @ 250µA 31 nC @ 4.5 V 60 V ±20V 1740 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRFL014NTR

AUIRFL014NTR

MOSFET N-CH 55V 1.5A SOT-223

Infineon Technologies

3,415 -
AUIRFL014NTR

数据表

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 10V 160mOhm @ 1.9A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 55 V ±20V 190 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AUIRFL024NTR

AUIRFL024NTR

MOSFET N-CH 55V 2.8A SOT-223

Infineon Technologies

9,274 -
AUIRFL024NTR

数据表

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V Surface Mount 4V @ 250µA 18.3 nC @ 10 V 55 V ±20V 400 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AUIRFR024NTRL

AUIRFR024NTRL

MOSFET N-CH 55V 17A TO252AA

Infineon Technologies

2,124 -
AUIRFR024NTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) - 75mOhm @ 10A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 55 V - 370 pF @ 25 V - - TO-252AA - 45W (Tc) -55°C ~ 175°C (TJ)
AUIRFR2407TRL

AUIRFR2407TRL

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

4,801 -
AUIRFR2407TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) - 26mOhm @ 25A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 75 V - 2400 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
AUIRFS3207ZTRL

AUIRFS3207ZTRL

MOSFET N-CH 75V 170A D2PAK

Infineon Technologies

7,633 -
AUIRFS3207ZTRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) - 4.1mOhm @ 75A, 10V Surface Mount 4V @ 150µA 170 nC @ 10 V 75 V - 6920 pF @ 50 V - - D2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
AUIRFS3306TRL

AUIRFS3306TRL

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies

5,764 -
AUIRFS3306TRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.2mOhm @ 75A, 10V Surface Mount 4V @ 150µA 125 nC @ 10 V 60 V ±20V 4520 pF @ 50 V - - PG-TO263-3 - 230W (Tc) -55°C ~ 175°C (TJ)
AUIRFS3607TRL

AUIRFS3607TRL

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies

3,921 -
AUIRFS3607TRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 9mOhm @ 46A, 10V Surface Mount 4V @ 100µA 84 nC @ 10 V 75 V ±20V 3070 pF @ 50 V - - PG-TO263-3 - 140W (Tc) -55°C ~ 175°C (TJ)
SI3139KL3B-TP

SI3139KL3B-TP

MOSFET

Micro Commercial Co

7,437 -
SI3139KL3B-TP

数据表

- SC-101, SOT-883 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 650mA (Ta) 1.8V, 4.5V 850mOhm @ 500mA, 4.5V Surface Mount 1.2V @ 250µA 1.4 nC @ 4.5 V 20 V ±12V 36 pF @ 10 V - - DFN1006-3 - 328mW (Tj) -55°C ~ 150°C (TJ)
2N7002KW-13P

2N7002KW-13P

MOSFET

Micro Commercial Co

9,361 -
2N7002KW-13P

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 340mA 4.5V, 10V 5Ohm @ 500mA, 10V Surface Mount 2.5V @ 1mA - 60 V ±20V 40 pF @ 10 V - - SOT-323 - 330mW -55°C ~ 150°C (TJ)
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