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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STP30N65M5

STP30N65M5

MOSFET N-CH 650V 22A TO220AB

STMicroelectronics

4,646 -
STP30N65M5

数据表

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 139mOhm @ 11A, 10V Through Hole 5V @ 250µA 64 nC @ 10 V 650 V ±25V 2880 pF @ 100 V - - TO-220 - 140W (Tc) 150°C (TJ)
IXFT96N20P

IXFT96N20P

MOSFET N-CH 200V 96A TO268

Littelfuse Inc.

110 -
IXFT96N20P

数据表

HiPerFET™, Polar TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 96A (Tc) 10V 24mOhm @ 500mA, 10V Surface Mount 5V @ 4mA 145 nC @ 10 V 200 V ±20V 4800 pF @ 25 V - - TO-268AA - 600W (Tc) -55°C ~ 175°C (TJ)
FDB0630N1507L

FDB0630N1507L

MOSFET N-CH 150V 130A TO263-7

onsemi

1,008 -
FDB0630N1507L

数据表

PowerTrench® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 6.4mOhm @ 18A, 10V Surface Mount 4V @ 250µA 135 nC @ 10 V 150 V ±20V 9895 pF @ 75 V - - TO-263-7 - 3.8W (Ta), 300W (Tc) -55°C ~ 150°C (TJ)
NVHL160N120SC1

NVHL160N120SC1

SICFET N-CH 1200V 17A TO247-3

onsemi

442 -
NVHL160N120SC1

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 17A (Tc) 20V 224mOhm @ 12A, 20V Through Hole 4.3V @ 2.5mA 34 nC @ 20 V 1200 V +25V, -15V 665 pF @ 800 V AEC-Q101 - TO-247-3 Automotive 119W (Tc) -55°C ~ 175°C (TJ)
AM7454N

AM7454N

MOSFET N-CH 50V 24A DFN5X6

Analog Power Inc.

1 -
AM7454N

数据表

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 24A (Ta) 4.5V, 10V 5.8mOhm @ 12A, 10V Surface Mount 1V @ 250µA 60 nC @ 4.5 V 60 V ±20V 7283 pF @ 15 V - - 8-DFN (5x6) - 5W (Ta) -55°C ~ 150°C (TJ)
AMR402N

AMR402N

MOSFET N-CH 200V 5.4A DFN5X6

Analog Power Inc.

1 -
AMR402N

数据表

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 5.4A (Ta) 6V, 10V 118mOhm @ 1A, 10V Surface Mount 1V @ 250µA 18 nC @ 6 V 200 V ±20V 894 pF @ 15 V - - 8-DFN (5x6) - 5W (Ta) -55°C ~ 150°C (TJ)
AMR436N

AMR436N

MOSFET N-CH 30V 100A DFN5X6

Analog Power Inc.

1 -
AMR436N

数据表

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 37A (Ta), 100A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V Surface Mount 1V @ 250µA 78 nC @ 4.5 V 30 V ±20V 7955 pF @ 15 V - - 8-DFN (5x6) - 5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
AM50P06-15D

AM50P06-15D

MOSFET P-CH -60V 44A TO-252

Analog Power Inc.

1 -
AM50P06-15D

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 44A (Tc) 4.5V, 10V 17mOhm @ 22A, 10V Surface Mount 1V @ 250µA 83 nC @ 10 V 60 V ±20V 4654 pF @ 15 V - - TO-252 - 50W (Tc) -55°C ~ 175°C (TJ)
AM90N20-78B

AM90N20-78B

MOSFET N-CH 200V 90A TO-263

Analog Power Inc.

20 -
AM90N20-78B

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 6V, 10V 78mOhm @ 57A, 10V Surface Mount 1V @ 250µA 57 nC @ 6 V 200 V ±20V 4467 pF @ 15 V - - TO-263 - 300W (Tc) -55°C ~ 175°C (TJ)
AM14N65P

AM14N65P

MOSFET N-CH 650V 14A TO-220

Analog Power Inc.

1 -
AM14N65P

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 650mOhm @ 18A, 10V Through Hole 2V @ 250µA 29 nC @ 6 V 650 V ±30V 3469 pF @ 15 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
AM202N04-04P

AM202N04-04P

MOSFET N-CH 40V 202A TO-220

Analog Power Inc.

1 -
AM202N04-04P

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 202A (Tc) 5.5V, 10V 4.6mOhm @ 202A, 10V Through Hole 1V @ 250µA 69 nC @ 5.5 V 40 V ±20V 9569 pF @ 15 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
AM90N10-14P

AM90N10-14P

MOSFET N-CH 100V 90A TO-220

Analog Power Inc.

1 -
AM90N10-14P

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 90A (Ta) 5.5V, 10V 16mOhm @ 30A, 10V Through Hole 1V @ 250µA 60 nC @ 5.5 V 100 V ±20V 4221 pF @ 15 V - - TO-220AB - 300W (Ta) -55°C ~ 175°C (TJ)
AM40N10-28D

AM40N10-28D

MOSFET N-CH 100V 34.6A TO-252

Analog Power Inc.

1 -
AM40N10-28D

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 28mOhm @ 35A, 10V Surface Mount 1V @ 250µA 30 nC @ 10 V 100 V ±20V - - - TO-252 - 50W (Tc) -55°C ~ 175°C (TJ)
AMTP65H150G4PS

AMTP65H150G4PS

GAN FET N-CH 650V TO-220

Analog Power Inc.

1 -
AMTP65H150G4PS

数据表

- TO-220-3 Tube Active N-Channel GaNFET (Gallium Nitride) 13A (Tc) 10V 150mOhm @ 10A, 10V Through Hole 1V @ 250µA 8 nC @ 6 V 650 V ±20V 598 pF @ 400 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
P3M06060G7

P3M06060G7

SICFET N-CH 650V 44A TO-263-7

PN Junction Semiconductor

6,512 -
P3M06060G7

数据表

P3M TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 44A 15V 79mOhm @ 20A, 15V Surface Mount 2.2V @ 20mA (Typ) - 650 V +20V, -8V - - - D2PAK-7 - 159W -55°C ~ 175°C (TJ)
SCT4013DTW

SCT4013DTW

SiC FET Top Side Cooling

Rohm Semiconductor

3,523 -
SCT4013DTW

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPF06N03LA G

IPF06N03LA G

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies

7,271 -
IPF06N03LA G

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 5.7mOhm @ 30A, 10V Surface Mount 2V @ 40µA 22 nC @ 5 V 25 V ±20V 2653 pF @ 15 V - - PG-TO252-3-23 - 83W (Tc) -55°C ~ 175°C (TJ)
IPFH6N03LA G

IPFH6N03LA G

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies

7,888 -
IPFH6N03LA G

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 6.2mOhm @ 50A, 10V Surface Mount 2V @ 30µA 19 nC @ 5 V 25 V ±20V 2390 pF @ 15 V - - PG-TO252-3-23 - 71W (Tc) -55°C ~ 175°C (TJ)
FQP3N90

FQP3N90

MOSFET N-CH 900V 3.6A TO220-3

onsemi

7,628 -
FQP3N90

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 4.25Ohm @ 1.8A, 10V Through Hole 5V @ 250µA 26 nC @ 10 V 900 V ±30V 910 pF @ 25 V - - TO-220-3 - 130W (Tc) -55°C ~ 150°C (TJ)
TSM950N10CW

TSM950N10CW

100V, 6.5A, SINGLE N-CHANNEL POW

Taiwan Semiconductor Corporation

4,476 -
TSM950N10CW

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.5A (Tc) 4.5V, 10V 95mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 9.3 nC @ 10 V 100 V ±20V 1480 pF @ 50 V - - SOT-223 - 9W (Tc) -55°C ~ 150°C (TJ)
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