Alpha & Omega Semiconductor Inc.|场效应晶体管（FETs）、MOSFETs - 页 45

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AON6232A MOSFET N-CH 40V 35A/85A 8DFN Alpha & Omega Semiconductor Inc.	9,298	-	询价单	数据表	-	8-PowerSMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Ta), 85A (Tc)	4.5V, 10V	2.9mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	60 nC @ 10 V	40 V	±20V	3250 pF @ 20 V	-	-	8-DFN (5x6)	-	6.2W (Ta), 113.5W (Tc)	-55°C ~ 150°C (TJ)
AOK065V120X2 SILICON CARBIDE MOSFET, ENHANCEM Alpha & Omega Semiconductor Inc.	118	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 20A, 15V	Through Hole	3.5V @ 250µA	62.3 nC @ 15 V	1200 V	+18V, -8V	1716 pF @ 800 V	-	-	TO-247	-	187.5W (Tj)	-55°C ~ 175°C (TJ)
AOT15S60L MOSFET N-CH 600V 15A TO220 Alpha & Omega Semiconductor Inc.	7,383	-	询价单	数据表	aMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	290mOhm @ 7.5A, 10V	Through Hole	3.8V @ 250µA	15.6 nC @ 10 V	600 V	±30V	372 pF @ 100 V	-	-	TO-220	-	208W (Tc)	-55°C ~ 150°C (TJ)
AOT480L MOSFET N-CH 80V 15A/180A TO220 Alpha & Omega Semiconductor Inc.	3,144	-	询价单	数据表	SDMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 180A (Tc)	7V, 10V	4.5mOhm @ 20A, 10V	Through Hole	4V @ 250µA	140 nC @ 10 V	80 V	±25V	7820 pF @ 40 V	-	-	TO-220	-	1.9W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)
AOM033V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	150	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	68A (Tc)	15V	43mOhm @ 20A, 15V	Through Hole	2.8V @ 17.5mA	104 nC @ 15 V	1200 V	+18V, -8V	2908 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	300W (Tj)	-55°C ~ 175°C (TJ)
AOM033V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	234	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	68A (Tc)	15V	43mOhm @ 20A, 15V	Through Hole	2.8V @ 17.5mA	104 nC @ 15 V	1200 V	+15V, -5V	2908 pF @ 800 V	-	-	TO-247-4L	-	300W (Ta)	-55°C ~ 175°C (TJ)
AOK033V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	209	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	68A (Tc)	15V	43mOhm @ 20A, 15V	Through Hole	2.8V @ 17.5mA	104 nC @ 15 V	1200 V	+15V, -5V	2908 pF @ 800 V	AEC-Q101	-	TO-247	Automotive	300W (Ta)	-55°C ~ 175°C (TJ)
AOM015V65X2 650V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	96A (Tc)	15V	22mOhm @ 24A, 15V	Through Hole	3.5V @ 24mA	152 nC @ 15 V	650 V	+15V, -5V	4880 pF @ 400 V	-	-	TO-247-4L	-	312W (Tj)	-55°C ~ 175°C (TJ)
AOK015V65X2 650V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	96A (Tc)	15V	22mOhm @ 24A, 15V	Through Hole	3.5V @ 24mA	152 nC @ 15 V	650 V	+15V, -5V	4880 pF @ 400 V	-	-	TO-247	-	312W (Tj)	-55°C ~ 175°C (TJ)
AOM020V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	230	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	89A (Tc)	15V	28mOhm @ 27A, 15V	Through Hole	2.8V @ 27mA	166 nC @ 15 V	1200 V	+18V, -8V	5180 pF @ 800 V	-	-	TO-247-4L	-	348W (Tc)	-55°C ~ 175°C (TJ)

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