Alpha & Omega Semiconductor Inc.|场效应晶体管（FETs）、MOSFETs - 页 44

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AOV11S60 MOSFET N-CH 600V 650MA/8A 4DFN Alpha & Omega Semiconductor Inc.	3,319	-	询价单	数据表	aMOS™	4-PowerTSFN	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650mA (Ta), 8A (Tc)	10V	500mOhm @ 3.8A, 10V	Surface Mount	4.1V @ 250µA	11 nC @ 10 V	600 V	±30V	545 pF @ 100 V	-	-	4-DFN (8x8)	-	8.3W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)
AOD4504 MOSFET N-CH 200V 1.5A/6A TO252 Alpha & Omega Semiconductor Inc.	6,402	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.5A (Ta), 6A (Tc)	10V	400mOhm @ 3A, 10V	Surface Mount	3.7V @ 250µA	115 nC @ 10 V	200 V	±20V	328 pF @ 100 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 42.5W (Tc)	-55°C ~ 175°C (TJ)
AOM065V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 10A, 15V	Through Hole	3.5V @ 10mA	62.3 nC @ 15 V	1200 V	+18V, -8V	1716 pF @ 800 V	-	-	TO-247-4L	-	187.5W (Tj)	-55°C ~ 175°C (TJ)
AOT22N50L MOSFET N-CH 500V 22A TO220 Alpha & Omega Semiconductor Inc.	6,530	-	询价单	数据表	-	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	260mOhm @ 11A, 10V	Through Hole	4.5V @ 250µA	83 nC @ 10 V	500 V	±30V	3710 pF @ 25 V	-	-	TO-220	-	417W (Tc)	-55°C ~ 150°C (TJ)
AOM065V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 10A, 15V	Through Hole	3.5V @ 10mA	62.3 nC @ 15 V	1200 V	+15V, -5V	1716 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	187.5W (Ta)	-55°C ~ 175°C (TJ)
AOB2146L N Alpha & Omega Semiconductor Inc.	4,105	-	询价单	数据表	AlphaSGT™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	42A (Ta), 105A (Tc)	4.5V, 10V	2.8mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	70 nC @ 10 V	40 V	±20V	3830 pF @ 20 V	-	-	TO-263 (D2PAK)	-	8.3W (Ta), 119W (Tc)	-55°C ~ 150°C (TJ)
AOK065V65X2 MOSFET N-CH 650V 40.3A TO247 Alpha & Omega Semiconductor Inc.	225	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 10A, 15V	Through Hole	3.5V @ 10mA	58.8 nC @ 15 V	650 V	+15V, -5V	1762 pF @ 400 V	-	-	TO-247	-	187.5W (Ta)	-55°C ~ 175°C (TJ)
AOT1404L MOSFET N-CH 40V 15A/220A TO220 Alpha & Omega Semiconductor Inc.	5,598	-	询价单	数据表	-	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 220A (Tc)	10V	4.2mOhm @ 20A, 10V	Through Hole	3.7V @ 250µA	86 nC @ 10 V	40 V	±20V	4300 pF @ 20 V	-	-	TO-220	-	2.1W (Ta), 417W (Tc)	-55°C ~ 175°C (TJ)
AOK065V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	240	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 10A, 15V	Through Hole	3.5V @ 10mA	62.3 nC @ 15 V	1200 V	+15V, -5V	1716 pF @ 800 V	AEC-Q101	-	TO-247	Automotive	187.5W (Tj)	-55°C ~ 175°C (TJ)
AOK033V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	208	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	68A (Tc)	15V	43mOhm @ 20A, 15V	Through Hole	2.8V @ 17.5mA	104 nC @ 15 V	1200 V	+15V, -5V	2908 pF @ 800 V	-	-	TO-247	-	300W (Ta)	-55°C ~ 175°C (TJ)

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