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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
DMN3012LFG-7

DMN3012LFG-7

MOSFET 2N-CH 30V 20A PWRDI3333

Diodes Incorporated

7,163 -
DMN3012LFG-7

数据表

- 8-PowerLDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 20A (Tc) 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V 2.1V @ 250µA, 1.15V @ 250µA 6.1nC @ 4.5V, 12.6nC @ 4.5V - 850pF @ 15V, 1480pF @ 15V 2.2W PowerDI3333-8 (Type D) -55°C ~ 150°C (TJ) Surface Mount - -
DMTH6016LPDWQ-13

DMTH6016LPDWQ-13

MOSFET 2N-CH 60V 9.2A PWRDI50

Diodes Incorporated

8,101 -
DMTH6016LPDWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel 60V 9.2A (Ta), 33.2A (Tc) 19mOhm @ 10A, 10V 2.5V @ 250µA 17nC @ 10V - 864pF @ 30V 2.5W (Ta), 37.5W (Tc) PowerDI5060-8 (SWP) -55°C ~ 175°C (TJ) Surface Mount Automotive AEC-Q101
DMTH43M8LPDWQ-13

DMTH43M8LPDWQ-13

MOSFET 2N-CH 40V 110A PWRDI50

Diodes Incorporated

5,180 -
DMTH43M8LPDWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel 40V 110A (Tc) 4.2mOhm @ 20A, 10V 2.5V @ 250µA 41.9nC @ 10V - 2796pF @ 20V 2.98W (Ta), 80.2W (Tc) PowerDI5060-8 (Type UXD) -55°C ~ 175°C (TJ) Surface Mount Automotive AEC-Q101
DMTH43M8SPDWQ-13

DMTH43M8SPDWQ-13

MOSFET 2N-CH 40V 105A PWRDI50

Diodes Incorporated

7,595 -
DMTH43M8SPDWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel 40V 105A (Tc) 4.5mOhm @ 20A, 10V 4V @ 250µA 40nC @ 10V - 2958pF @ 20V 3W (Ta), 76W (Tc) PowerDI5060-8 (Type UXD) -55°C ~ 175°C (TJ) Surface Mount Automotive AEC-Q101
DMPH6050SPDWQ-13

DMPH6050SPDWQ-13

MOSFET 2P-CH 60V 6.3A PWRDI50

Diodes Incorporated

4,436 -
DMPH6050SPDWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel 60V 6.3A (Ta), 26A (Tc) 48mOhm @ 5A, 10V 3V @ 250µA 30.6nC @ 10V - 1525pF @ 30V 1.5W (Ta) PowerDI5060-8 (Type UX) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank Automotive AEC-Q101
DMP2066LSD-13

DMP2066LSD-13

MOSFET 2P-CH 20V 5.8A 8SO

Diodes Incorporated

3,662 -
DMP2066LSD-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 5.8A 40mOhm @ 4.6A, 4.5V 1.2V @ 250µA 10.1nC @ 4.5V Logic Level Gate 820pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
DMP4011SPSWQ-13

DMP4011SPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

3,760 -
DMP4011SPSWQ-13

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
ZXMN2A04DN8TC

ZXMN2A04DN8TC

MOSFET 2N-CH 20V 5.9A 8SO

Diodes Incorporated

4,276 -
ZXMN2A04DN8TC

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 5.9A 25mOhm @ 5.9A, 4.5V 700mV @ 250µA (Min) 22.1nC @ 5V Logic Level Gate 1880pF @ 10V 1.8W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
ZXMN3A04DN8TC

ZXMN3A04DN8TC

MOSFET 2N-CH 30V 6.5A 8SO

Diodes Incorporated

2,448 -
ZXMN3A04DN8TC

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6.5A 20mOhm @ 12.6A, 10V 1V @ 250µA (Min) 36.8nC @ 10V Logic Level Gate 1890pF @ 15V 1.81W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
DMTH6010LPDWQ-13

DMTH6010LPDWQ-13

MOSFET 2N-CH 60V 13.1A PWRDI50

Diodes Incorporated

5,410 -
DMTH6010LPDWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel 60V 13.1A (Ta), 47.6A (Tc) 11mOhm @ 20A, 10V 3V @ 250µA 40.2nC @ 10V - 2615pF @ 30V 2.8W (Ta), 37.5W (Tc) PowerDI5060-8 (Type UXD) -55°C ~ 175°C (TJ) Surface Mount Automotive AEC-Q101
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