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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD110802SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
5,212 | - |
|
数据表 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD110804SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
3,286 | - |
|
数据表 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
ALD210808PCLMOSFET 4N-CH 10.6V 0.08A 16PDIP Advanced Linear Devices Inc. |
6,795 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 80mA | - | 20mV @ 10µA | - | Logic Level Gate | - | 500mW | 16-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
ALD1110EPALMOSFET 2N-CH 10V 8PDIP Advanced Linear Devices Inc. |
6,118 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Not For New Designs | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | - | 2.5pF @ 5V | 600mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
ALD1110ESALMOSFET 2N-CH 10V 8SOIC Advanced Linear Devices Inc. |
8,205 | - |
|
数据表 |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Not For New Designs | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | - | 2.5pF @ 5V | 600mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD110808PCLMOSFET 4N-CH 10.6V 16PDIP Advanced Linear Devices Inc. |
4,672 | - |
|
数据表 |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
ALD310700SCLMOSFET 4P-CH 8V 16SOIC Advanced Linear Devices Inc. |
4,746 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | 8V | - | - | 20mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C | Surface Mount | - | - |
|
|
ALD310702SCLMOSFET 4P-CH 8V 16SOIC Advanced Linear Devices Inc. |
7,714 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | 8V | - | - | 180mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C | Surface Mount | - | - |
|
|
ALD310704SCLMOSFET 4P-CH 8V 16SOIC Advanced Linear Devices Inc. |
6,333 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | 8V | - | - | 380mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C | Surface Mount | - | - |
|
|
ALD114935PALMOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
6,525 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | Depletion Mode | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
