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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD212902SALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
4,140 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 80mA | - | 20mV @ 10µA | - | Logic Level Gate | - | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD212904SALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
8,080 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 80mA | - | 20mV @ 10µA | - | Logic Level Gate | - | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD212908SALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
9,980 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 80mA | - | 20mV @ 10µA | - | Logic Level Gate | - | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
ALD110902PALMOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
7,660 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD110904PALMOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
6,363 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD111933PALMOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
6,835 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
ALD114804SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
5,086 | - |
|
数据表 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | Depletion Mode | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD114904PALMOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
2,925 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | Depletion Mode | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD210808SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. |
5,370 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 80mA | - | 20mV @ 10µA | - | Logic Level Gate | - | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD114813SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
4,588 | - |
|
数据表 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | Depletion Mode | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
