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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD310708PCLMOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc. |
3,316 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | 8V | - | - | 780mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-PDIP | 0°C ~ 70°C | Through Hole | - | - |
|
ALD1101BPALMOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
3,396 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | - | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD1102BPALMOSFET 2P-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
5,033 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 10pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
ALD110808ASCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
4,979 | - |
|
数据表 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD114804APCLMOSFET 4N-CH 10.6V 16PDIP Advanced Linear Devices Inc. |
7,794 | - |
|
数据表 |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | Depletion Mode | 2.5pF @ 5V | 500mW | 16-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD110808APCLMOSFET 4N-CH 10.6V 16PDIP Advanced Linear Devices Inc. |
2,978 | - |
|
数据表 |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD310702APCLMOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc. |
3,420 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | 8V | - | - | 180mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-PDIP | 0°C ~ 70°C | Through Hole | - | - |
|
|
ALD310704APCLMOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc. |
3,289 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | 8V | - | - | 380mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-PDIP | 0°C ~ 70°C | Through Hole | - | - |
|
|
ALD310708APCLMOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc. |
4,185 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | 8V | - | - | 780mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-PDIP | 0°C ~ 70°C | Through Hole | - | - |
|
|
ALD1101APALMOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
4,524 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 10pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
