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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
FDW2506P

FDW2506P

MOSFET 2P-CH 20V 5.3A 8TSSOP

Fairchild Semiconductor

102,545 -
FDW2506P

数据表

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 5.3A 22mOhm @ 5.3A, 4.5V 1.5V @ 250µA 34nC @ 4.5V Logic Level Gate 1015pF @ 10V 600mW 8-TSSOP -55°C ~ 150°C (TJ) Surface Mount - -
NDH8304P

NDH8304P

MOSFET 2P-CH 20V 2.7A SUPERSOT-8

Fairchild Semiconductor

42,000 -
NDH8304P

数据表

- 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 2.7A 70mOhm @ 2.7A, 4.5V 1V @ 250µA 23nC @ 4.5V Logic Level Gate 865pF @ 10V 800mW SuperSOT™-8 -55°C ~ 150°C (TJ) Surface Mount - -
NDS9947

NDS9947

MOSFET 2P-CH 20V 3.5A 8SOIC

Fairchild Semiconductor

12,500 -
NDS9947

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 3.5A 100mOhm @ 3.5A, 10V 3V @ 250µA 13nC @ 10V Logic Level Gate 542pF @ 10V 900mW 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
FDS8934A

FDS8934A

MOSFET 2P-CH 20V 4A 8SOIC

Fairchild Semiconductor

52,862 -
FDS8934A

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 4A 55mOhm @ 4A, 4.5V 1V @ 250µA 28nC @ 5V Logic Level Gate 1130pF @ 10V 900mW 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
FDS4501H

FDS4501H

MOSFET N/P-CH 30V/20V 9.3A 8SOIC

Fairchild Semiconductor

20,450 -
FDS4501H

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) N and P-Channel 30V, 20V 9.3A, 5.6A 18mOhm @ 9.3A, 10V 3V @ 250µA 27nC @ 4.5V Logic Level Gate 1958pF @ 10V 1W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
NDH8321C

NDH8321C

MOSFET N/P-CH 20V 3.8A SUPERSOT

Fairchild Semiconductor

3,000 -
NDH8321C

数据表

- 8-TSOP (0.130", 3.30mm Width) Bulk Active MOSFET (Metal Oxide) N and P-Channel 20V 3.8A (Ta), 2.7A (Ta) 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V 1V @ 250µA 28nC @ 4.5V, 23nC @ 4.5V - 700pF @ 10V, 865pF @ 10V 800mW (Ta) SuperSOT™-8 -55°C ~ 150°C (TJ) Surface Mount - -
FDMS9408

FDMS9408

MOSFET N-CH

Fairchild Semiconductor

1,838 -
FDMS9408

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FDR8702H

FDR8702H

MOSFET N/P-CH 20V 3.6A SUPERSOT

Fairchild Semiconductor

254,870 -
FDR8702H

数据表

PowerTrench® 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel 20V 3.6A, 2.6A 38mOhm @ 3.6A, 4.5V 1.5V @ 250µA 10nC @ 4.5V Logic Level Gate 650pF @ 10V 800mW SuperSOT™-8 -55°C ~ 150°C (TJ) Surface Mount - -
RF1K4915496

RF1K4915496

MOSFET 2N-CH 60V 2A 8SOIC

Fairchild Semiconductor

2,500 -
RF1K4915496

数据表

LittleFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 2A (Ta) 130mOhm @ 2A, 10V 4V @ 250µA 32nC @ 20V - 340pF @ 25V 2W (Ta) 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
NDH8521C

NDH8521C

MOSFET N/P-CH 30V 3.8A SUPERSOT

Fairchild Semiconductor

39,000 -
NDH8521C

数据表

- 8-TSOP (0.130", 3.30mm Width) Bulk Active MOSFET (Metal Oxide) N and P-Channel 30V 3.8A (Ta), 2.7A (Ta) 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V 2V @ 250µA 25nC @ 10V, 27nC @ 10V - 500pF @ 15V, 560pF @ 15V 800mW (Ta) SuperSOT™-8 -55°C ~ 150°C (TJ) Surface Mount - -
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