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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
NXV10V160ST1

NXV10V160ST1

MOSFET 6N-CH 100V APM21-CGA

onsemi

5,399 -
NXV10V160ST1

数据表

- 21-PowerDIP Module (1.370", 34.80mm) Tube Active MOSFET (Metal Oxide) 6 N-Channel 100V - - 4.5V @ 250µA 101nC @ 10V - 6970pF @ 50V - APM21-CGA 175°C (TJ) Through Hole - -
NXV08H250DT1

NXV08H250DT1

MOSFET 4N-CH 80V APM17-MDC

onsemi

6,371 -
NXV08H250DT1

数据表

- 17-PowerDIP Module (1.390", 35.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel 80V - 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V 4.6V @ 1mA 320nC @ 10V - 24350pF @ 40V - APM17-MDC 175°C (TJ) Through Hole Automotive AEC-Q101
NXV08H250DPT2

NXV08H250DPT2

MOSFET 4N-CH 80V APM17-MFA

onsemi

9,988 -
NXV08H250DPT2

数据表

- 17-PowerDIP Module (2.020", 51.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel 80V - 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V 4.6V @ 1mA 320nC @ 10V - 24350pF @ 40V - APM17-MFA -40°C ~ 125°C Through Hole Automotive AEC-Q101
NXV08H300DT1

NXV08H300DT1

MOSFET 4N-CH 80V APM17-MDC

onsemi

2,437 -
NXV08H300DT1

数据表

- 17-PowerDIP Module (1.390", 35.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel 80V - 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V - 30150pF @ 40V - APM17-MDC 175°C (TJ) Through Hole Automotive AEC-Q101
NXV08H400XT2

NXV08H400XT2

MOSFET 4N-CH 80V APM17-MDA

onsemi

3,944 -
NXV08H400XT2

数据表

- 17-PowerDIP Module (1.778", 45.15mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel 80V - 0.765mOhm @ 160A, 12V, 0.710mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V - 30150pF @ 40V - APM17-MDA 175°C (TJ) Through Hole Automotive AEC-Q101
NXV08B800DT1

NXV08B800DT1

MOSFET 80V APM17-MDC

onsemi

8,560 -
NXV08B800DT1

数据表

- 17-PowerDIP Module (1.390", 35.30mm) Bulk Active MOSFET (Metal Oxide) - 80V - 0.46mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V - 30150pF @ 40V - APM17-MDC -40°C ~ 125°C (TA) Through Hole Automotive AEC-Q101
NXV08H350XT1

NXV08H350XT1

MOSFET 80V APM17-MDC

onsemi

3,804 -
NXV08H350XT1

数据表

- 17-PowerDIP Module (1.390", 35.30mm) Bulk Active MOSFET (Metal Oxide) - 80V - 0.762mOhm @ 160A, 12V 4.6V @ 1mA 320nC @ 10V - 24350pF @ 40V - APM17-MDC -40°C ~ 125°C (TA) Through Hole Automotive AEC-Q101
MMDF2P02HDR2

MMDF2P02HDR2

MOSFET 2P-CH 20V 3.3A 8SOIC

onsemi

4,793 -
MMDF2P02HDR2

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 3.3A 160mOhm @ 2A, 10V 2V @ 250µA 20nC @ 10V Logic Level Gate 588pF @ 16V 2W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
MMDF3N04HDR2

MMDF3N04HDR2

MOSFET 2N-CH 40V 3.4A 8SOIC

onsemi

4,954 -
MMDF3N04HDR2

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 40V 3.4A 80mOhm @ 3.4A, 10V 3V @ 250µA 28nC @ 10V Logic Level Gate 900pF @ 32V 1.39W 8-SOIC - Surface Mount - -
MMDF1N05ER2

MMDF1N05ER2

MOSFET 2N-CH 50V 2A 8SOIC

onsemi

8,393 -
MMDF1N05ER2

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 50V 2A 300mOhm @ 1.5A, 10V 3V @ 250µA 12.5nC @ 10V Logic Level Gate 330pF @ 25V 2W 8-SOIC - Surface Mount - -
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