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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVMFD5C462NLWFT1GMOSFET 2N-CH 40V 18A 8DFN onsemi |
1,080 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 18A (Ta), 84A (Tc) | 4.7mOhm @ 10A, 10V | 2.2V @ 40µA | 11nC @ 4.5V | - | 1300pF @ 25V | 3W (Ta), 50W (Tc) | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
NVMJD2D7N04CLTWGMOSFET N-CH 40V LFPAK56 onsemi |
3,000 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDPC8012SMOSFET 2N-CH 25V 13A PWRCLIP-33 onsemi |
3,000 | - |
|
数据表 |
PowerTrench® | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 25V | 13A, 26A | 7mOhm @ 12A, 4.5V | 2.2V @ 250µA | 8nC @ 4.5V | Logic Level Gate | 1075pF @ 13V | 800mW, 900mW | Powerclip-33 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
NVMFD5C446NT1GMOSFET 2N-CH 40V 24A 8DFN onsemi |
1,450 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 24A (Ta), 127A (Tc) | 2.9mOhm @ 30A, 10V | 3.5V @ 250µA | 38nC @ 10V | - | 2450pF @ 25V | 3.2W (Ta), 89W (Tc) | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
NVMFD5C650NLT1GMOSFET 2N-CH 60V 21A 8DFN onsemi |
1,432 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 21A (Ta), 111A (Tc) | 4.2mOhm @ 20A, 10V | 2.2V @ 98µA | 16nC @ 4.5V | - | 2546pF @ 25V | 3.5W (Ta), 125W (Tc) | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
NXH040P120MNF1PTGMOSFET 2N-CH 1200V 30A onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | - | 1505pF @ 800V | 74W | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
NXH040F120MNF1PTGMOSFET 4N-CH 1200V 30A 22PIM onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | - | 1505pF @ 800V | 74W (Tj) | 22-PIM (33.8x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH020P120MNF1PTGMOSFET 2N-CH 1200V 51A onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | - | 2420pF @ 800V | 119W (Tj) | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
NXH010P90MNF1PTGMOSFET 2N-CH 900V 154A onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | - | 7007pF @ 450V | 328W (Tj) | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
NXH020F120MNF1PTGMOSFET 4N-CH 1200V 51A 22PIM onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | - | 2420pF @ 800V | 119W (Tj) | 22-PIM (33.8x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
