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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDPC8013SMOSFET 2N-CH 30V 13A PWRCLIP-33 onsemi |
1,262 | - |
|
数据表 |
PowerTrench® | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 13A, 26A | 6.4mOhm @ 13A, 10V | 3V @ 250µA | 13nC @ 10V | Logic Level Gate | 827pF @ 15V | 800mW, 900mW | Powerclip-33 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
NVMFD6H840NLT1GMOSFET 2N-CH 80V 14A 8DFN onsemi |
1,502 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 80V | 14A (Ta), 74A (Tc) | 6.9mOhm @ 20A, 10V | 2V @ 96µA | 32nC @ 10V | - | 2002pF @ 40V | - | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
FDMQ8403MOSFET 4N-CH 100V 3.1A 12MLP onsemi |
14,889 | - |
|
数据表 |
GreenBridge™ PowerTrench® | 12-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | 100V | 3.1A | 110mOhm @ 3A, 10V | 4V @ 250µA | 5nC @ 10V | - | 215pF @ 15V | 1.9W | 12-MLP (5x4.5) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
NVMFD5C446NLWFT1GMOSFET 2N-CH 40V 25A 8DFN onsemi |
785 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 25A (Ta), 145A (Tc) | 2.65mOhm @ 20A, 10V | 2.2V @ 90µA | 25nC @ 4.5V | - | 3170pF @ 25V | 3.5W (Ta) | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
NXH011T120M3F2PTHGMOSFET 4N-CH 1200V 91A 29PIM onsemi |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Solar Inverter) | 1200V (1.2kV) | 91A (Tc) | 16mOhm @ 70A, 18V | 4.4V @ 40mA | 306nC @ 20V | - | 6331pF @ 800V | 272W (Tj) | 29-PIM (56.7x42.5) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NXH004P120M3F2PTHGMOSFET 2N-CH 1200V 284A 36PIM onsemi |
23 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 284A (Tc) | 5.5mOhm @ 200A, 18V | 4.4V @ 120mA | 876nC @ 20V | - | 16410pF @ 800V | 785W (Tc) | 36-PIM (56.7x62.8) | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
NVJD5121NT1G-M06MOSFET 2N-CH 60V 0.295A SC88 onsemi |
40,120 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 295mA (Ta) | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.9nC @ 4.5V | - | 26pF @ 20V | 250mW (Ta) | SC-88/SC70-6/SOT-363 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
NTJD4105CT2GMOSFET N/P-CH 20V/8V 0.63A SC88 onsemi |
3,859 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 20V, 8V | 630mA, 775mA | 375mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | Logic Level Gate | 46pF @ 20V | 270mW | SC-88/SC70-6/SOT-363 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
NVJD4401NT1GMOSFET 2N-CH 20V 0.63A SC88 onsemi |
49,287 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 630mA | 375mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | Logic Level Gate | 46pF @ 20V | 270mW | SC-88/SC70-6/SOT-363 | -55°C ~ 150°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
EFC2J013NUZTDGMOSFET 2N-CH 6WLCSP onsemi |
4,319 | - |
|
数据表 |
- | 6-SMD, No Lead | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Common Drain | - | - | - | 1.3V @ 1mA | 37nC @ 4.5V | - | - | 1.8W (Ta) | 6-WLCSP (2x1.49) | 150°C (TJ) | Surface Mount | - | - |
