富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
BSM400D12P3G002

BSM400D12P3G002

MOSFET 2N-CH 1200V 400A MODULE

Rohm Semiconductor

2 -
BSM400D12P3G002

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 400A (Tc) - 5.6V @ 109.2mA - - 17000pF @ 10V 1570W (Tc) Module -40°C ~ 150°C (TJ) Chassis Mount - -
MSCSM170HM087CAG

MSCSM170HM087CAG

MOSFET 4N-CH 1700V 238A

Microchip Technology

9 -
MSCSM170HM087CAG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V - 13200pF @ 1000V 1.114kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM170AM039CT6AG

MSCSM170AM039CT6AG

MOSFET 2N-CH 1700V 523A

Microchip Technology

2 -
MSCSM170AM039CT6AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V - 29700pF @ 1000V 2.4kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
BSM300D12P3E005

BSM300D12P3E005

MOSFET 2N-CH 1200V 300A MODULE

Rohm Semiconductor

6 -
BSM300D12P3E005

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 300A (Tc) - 5.6V @ 91mA - - 14000pF @ 10V 1260W (Tc) Module -40°C ~ 150°C (TJ) Chassis Mount - -
BSM400D12P2G003

BSM400D12P2G003

MOSFET 2N-CH 1200V 400A MODULE

Rohm Semiconductor

4 -
BSM400D12P2G003

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 400A (Tc) - 4V @ 85mA - - 38000pF @ 10V 2450W (Tc) Module -40°C ~ 150°C (TJ) - - -
ADP360120W3

ADP360120W3

MOSFET 6N-CH 1200V 379A ACEPACK

STMicroelectronics

6 -
ADP360120W3

数据表

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel 1200V (1.2kV) 379A (Tj) 3.45mOhm @ 360A, 18V 4.4V @ 40mA 944nC @ 18V - 28070pF @ 800V 704W (Tj) ACEPACK -40°C ~ 175°C (TJ) Chassis Mount - -
DMC2710UVQ-7

DMC2710UVQ-7

MOSFET N/P-CH 20V 1.1A SOT563

Diodes Incorporated

535 -
DMC2710UVQ-7

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel 20V 1.1A (Ta), 800mA (Ta) 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V 1V @ 250µA 0.6nC @ 4.5V, 0.7nC @ 4.5V - 42pF @ 16V, 49pF @ 16V 460mW (Ta) SOT-563 -55°C ~ 150°C (TJ) Surface Mount Automotive AEC-Q101
PJT7828_R1_00001

PJT7828_R1_00001

MOSFET 2N-CH 30V 0.3A SOT363

Panjit International Inc.

195 -
PJT7828_R1_00001

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 300mA (Ta) 1.2Ohm @ 300mA, 4.5V 1V @ 250µA 0.9nC @ 4.5V - 45pF @ 10V 350mW (Ta) SOT-363 -55°C ~ 150°C (TJ) Surface Mount - -
BSS84DWQ-7

BSS84DWQ-7

MOSFET 2P-CH 50V 0.13A SOT363

Diodes Incorporated

185 -
BSS84DWQ-7

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 50V 130mA (Ta) 10Ohm @ 100mA, 5V 2V @ 1mA - - 45pF @ 25V 300mW (Ta) SOT-363 -55°C ~ 150°C (TJ) Surface Mount Automotive AEC-Q101
DMG1026UVQ-7

DMG1026UVQ-7

MOSFET 2N-CH 60V 0.44A SOT563

Diodes Incorporated

880 -
DMG1026UVQ-7

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 440mA (Ta) 1.8Ohm @ 500mA, 10V 1.8V @ 250µA 0.45pC @ 4.5V Logic Level Gate 32pF @ 25V 650mW SOT-563 -55°C ~ 150°C (TJ) Surface Mount Automotive AEC-Q101
DMC2025UFDB-7

DMC2025UFDB-7

MOSFET N/P-CH 20V 6A 6UDFN

Diodes Incorporated

867 -
DMC2025UFDB-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary 20V 6A (Ta), 3.5A (Ta) 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V 1V @ 250µA, 1.4V @ 250µA 12.3nC @ 10V, 15nC @ 8V - 486pF @ 10V, 642pF @ 10V 700mW (Ta) U-DFN2020-6 (Type B) -55°C ~ 150°C (TJ) Surface Mount - -
XP2530AGY

XP2530AGY

MOSFET N/P-CH 30V 3.3A SOT26

YAGEO XSEMI

985 -
XP2530AGY

数据表

- SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel 30V 3.3A (Ta), 2.3A (Ta) 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V 3V @ 250µA 4.5nC @ 4.5V - 320pF @ 15V, 260pF @ 15V 1.136W (Ta) SOT-26 -55°C ~ 150°C (TJ) Surface Mount - -
DMN2050LFDB-7

DMN2050LFDB-7

MOSFET 2N-CH 20V 3.3A 6UDFN

Diodes Incorporated

510 -
DMN2050LFDB-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 3.3A 45mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V Logic Level Gate 389pF @ 10V 730mW U-DFN2020-6 (Type B) -55°C ~ 150°C (TJ) Surface Mount - -
DMP2040USD-13

DMP2040USD-13

MOSFET 2P-CH 20V 6.5A 8SO

Diodes Incorporated

585 -
DMP2040USD-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 6.5A (Ta), 12A (Tc) 33mOhm @ 8.9A, 4.5V 1.5V @ 250µA 19nC @ 8V - 834pF @ 10V 1.1W (Ta) 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
XP3700YT

XP3700YT

MOSFET N/P-CH 30V 8.7A PMPAK

YAGEO XSEMI

995 -
XP3700YT

数据表

XP3700 8-PowerDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel 30V 8.7A (Ta), 6.1A (Tc) 20mOhm @ 8A, 10V 2.5V @ 1mA 8nC @ 4.5V - 880pF @ 15V 2.5W (Ta) PMPAK® 3 x 3 -55°C ~ 150°C (TJ) Surface Mount - -
DMTH45M5SPDWQ-13

DMTH45M5SPDWQ-13

MOSFET 2N-CH 40V 79A PWRDI50

Diodes Incorporated

80 -
DMTH45M5SPDWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 40V 79A (Tc) 5.5mOhm @ 25A, 10V 3.5V @ 250µA 13.2nC @ 10V - 1083pF @ 20V 3.3W (Ta), 60W (Tc) PowerDI5060-8 (Type UXD) -55°C ~ 175°C (TJ) Surface Mount Automotive AEC-Q101
KFCAB21520LE

KFCAB21520LE

MOSFET 2N-CH 12V 16A 10SMD

Nuvoton Technology Corporation

1,000 -
KFCAB21520LE

数据表

- 10-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain 12V 16A (Ta) 2mOhm @ 8A, 4.5V 1.4V @ 1.64mA 38nC @ 4V - 5250pF @ 10V 540mW (Ta) 10-SMD 150°C Surface Mount - -
SK2S240-45

SK2S240-45

45V, 240A, SOT-227, POWER MODULE

SMC Diode Solutions

36 -
SK2S240-45

数据表

- - Bulk Active - - - - - - - - - - - - - - -
FAM65CR51DZ1

FAM65CR51DZ1

MOSFET 2N-CH 650V 33A APMCD-B16

onsemi

67 -
FAM65CR51DZ1

数据表

- 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel 650V 33A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V - 4864pF @ 400V 160W (Tc) APMCD-B16 -55°C ~ 150°C (TJ) Through Hole Automotive AEC-Q101
SH63N65DM6AG

SH63N65DM6AG

MOSFET 2N-CH 650V 53A 9ACEPACK

STMicroelectronics

38 -
SH63N65DM6AG

数据表

ECOPACK® 9-PowerSMD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) 650V 53A (Tc) 64mOhm @ 23A, 10V 4.75V @ 250µA 80nC @ 10V - 3344pF @ 100V 424W (Tc) 9-ACEPACK SMIT -55°C ~ 150°C (TJ) Surface Mount - -
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户