订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSCSM120TAM11CTPAGMOSFET 6N-CH 1200V 251A SP6-P |
2 | - |
|
数据表 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | - | 9060pF @ 1000V | 1.042kW (Tc) | SP6-P | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
MSCSM120AM03CT6LIAGMOSFET 2N-CH 1200V 805A SP6C LI |
2 | - |
|
数据表 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 805A (Tc) | 3.1mOhm @ 400A, 20V | 2.8V @ 10mA | 2320nC @ 20V | - | 30200pF @ 1kV | 3.215kW (Tc) | SP6C LI | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
MSCSM170AM039CD3AGMOSFET 2N-CH 1700V 523A |
2 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 1700V (1.7kV) | 523A (Tc) | 5mOhm @ 270A, 20V | 3.3V @ 22.5mA | 1602nC @ 20V | - | 29700pF @ 1000V | 2.4kW (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
BSM600D12P3G001MOSFET 2N-CH 1200V 600A MODULE |
7 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 600A (Tc) | - | 5.6V @ 182mA | - | - | 31000pF @ 10V | 2450W (Tc) | Module | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
FS03MR12A6MA1LBBPSA1MOSFET 6N-CH 1200V AG-HYBRIDD |
2 | - |
|
数据表 |
HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 400A | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | - | 42500pF @ 600V | - | AG-HYBRIDD-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
CAS480M12HM3MOSFET 2N-CH 1200V 640A MODULE |
1 | - |
|
数据表 |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 640A (Tc) | 2.97mOhm @ 480A, 15V | 3.6V @ 160mA | 1590nC @ 15V | - | 43100pF @ 800V | - | Module | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
MCQ4503B-TPMOSFET N/P-CH 30V 5.6A 8SOP |
362 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 30V | 5.6A (Ta), 4.4A (Ta) | 25mOhm @ 5.6A, 10V | 1.5V @ 250µA, 1.4V @ 250µA | 4.8nC @ 4.5V, 7.2nC @ 10V | - | 535pF @ 15V, 680pF @ 15V | 2W | 8-SOP | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
DMN2028UFDH-7MOSFET 2N-CH 20V 6.8A POWERDI |
118 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Common Drain | 20V | 6.8A | 20mOhm @ 4A, 10V | 1V @ 250µA | 8.5nC @ 4.5V | Logic Level Gate | 151pF @ 10V | 1.1W | PowerDI3030-8 | -55°C ~ 150°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
SIS932EDN-T1-GE3MOSFET 2N-CH 30V 6A PPAK 1212 |
743 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 6A (Tc) | 22mOhm @ 10A, 4.5V | 1.4V @ 250µA | 14nC @ 4.5V | - | 1000pF @ 15V | 2.6W (Ta), 23W (Tc) | PowerPAK® 1212-8 Dual | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
CSD87333Q3DTMOSFET 2N-CH 30V 15A 8VSON |
284 | - |
|
数据表 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 30V | 15A | 14.3mOhm @ 4A, 8V | 1.2V @ 250µA | 4.6nC @ 4.5V | Logic Level Gate, 5V Drive | 662pF @ 15V | 6W | 8-VSON (3.3x3.3) | 125°C (TJ) | Surface Mount | - | - |
|
ZXMN2A04DN8TAMOSFET 2N-CH 20V 5.9A 8SO |
542 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 5.9A | 25mOhm @ 5.9A, 4.5V | 700mV @ 250µA (Min) | 22.1nC @ 5V | Logic Level Gate | 1880pF @ 10V | 1.8W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
CSD86336Q3DTMOSFET 2N-CH 25V 20A 8VSON |
1 | - |
|
数据表 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 25V | 20A (Ta) | 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 1.9V @ 250µA, 1.6V @ 250µA | 3.8nC @ 45V, 7.4nC @ 45V | Logic Level Gate, 5V Drive | 494pF @ 12.5V, 970pF @ 12.5V | 6W | 8-VSON (3.3x3.3) | -55°C ~ 125°C | Surface Mount | - | - |
|
ALD110902SALMOSFET 2N-CH 10.6V 8SOIC |
27 | - |
|
数据表 |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
ALD212900PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
28 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 80mA | 14Ohm | 20mV @ 20µA | - | Logic Level Gate | 30pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
ALD110900APALMOSFET 2N-CH 10.6V 8PDIP |
49 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
FMM75-01FMOSFET 2N-CH 100V 75A I4-PAC |
15 | - |
|
数据表 |
HiPerFET™ | i4-Pac™-5 | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 75A | 25mOhm @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | - | - | - | ISOPLUS i4-PAC™ | -55°C ~ 150°C (TJ) | Through Hole | - | - |
|
APTM50H14FT3GMOSFET 4N-CH 500V 26A SP3 |
13 | - |
|
数据表 |
- | SP3 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | 500V | 26A | 168mOhm @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | - | 3259pF @ 25V | 208W | SP3 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
APTC60DSKM24T3GMOSFET 2N-CH 600V 95A SP3 |
7 | - |
|
数据表 |
CoolMOS™ | SP3 | Tray | Active | MOSFET (Metal Oxide) | 2 N Channel (Dual Buck Chopper) | 600V | 95A | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | - | 14400pF @ 25V | 462W | SP3 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
APTM50HM65FT3GMOSFET 4N-CH 500V 51A SP3 |
8 | - |
|
数据表 |
- | SP3 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | 500V | 51A | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | - | 7000pF @ 25V | 390W | SP3 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
APTM50AM38STGMOSFET 2N-CH 500V 90A SP4 |
6 | - |
|
数据表 |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 500V | 90A | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | - | 11200pF @ 25V | 694W | SP4 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
