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单个双极晶体管

制造商 系列 封装/外壳 包装 产品状态 晶体管类型 电流 - 集电极 (Ic)(最大值) 集电极饱和电压 (Vce)(最大值)@ Ib, Ic 电流 - 集电极截止(最大值) 直流电流增益(hFE)(最小值)@ Ic, Vce 功率 - 最大值 频率 - 跃迁 电压 - 集电极发射极击穿(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 晶体管类型 电流 - 集电极 (Ic)(最大值) 集电极饱和电压 (Vce)(最大值)@ Ib, Ic 电流 - 集电极截止(最大值) 直流电流增益(hFE)(最小值)@ Ic, Vce 功率 - 最大值 频率 - 跃迁 电压 - 集电极发射极击穿(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
2N5088_D11Z

2N5088_D11Z

TRANS NPN 30V 0.1A TO-92-3

onsemi

7,564 -
2N5088_D11Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Obsolete NPN 100 mA 500mV @ 1mA, 10mA 50nA (ICBO) 300 @ 100µA, 5V 625 mW 50MHz 30 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
KTC3198-Y

KTC3198-Y

TRANS NPN 50V 0.15A TO-92

Taiwan Semiconductor Corporation

3,579 -
KTC3198-Y

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active NPN 150 mA 250mV @ 10mA, 100mA 100nA (ICBO) 70 @ 2mA, 6V 500 mW 80MHz 50 V -55°C ~ 150°C (TJ) - - Through Hole TO-92
KTC3198-GR

KTC3198-GR

TRANS NPN 50V 0.15A TO-92

Taiwan Semiconductor Corporation

9,205 -
KTC3198-GR

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active NPN 150 mA 250mV @ 10mA, 100mA 100nA (ICBO) 70 @ 2mA, 6V 500 mW 80MHz 50 V -55°C ~ 150°C (TJ) - - Through Hole TO-92
2SA949-Y(T6ONK1,FM

2SA949-Y(T6ONK1,FM

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

9,664 -
2SA949-Y(T6ONK1,FM

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
MPSA18_D27Z

MPSA18_D27Z

TRANS NPN 45V 0.1A TO-92-3

onsemi

9,288 -
MPSA18_D27Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Obsolete NPN 100 mA 300mV @ 5mA, 50mA 50nA (ICBO) 500 @ 10mA, 5V 625 mW 100MHz 45 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
2SA949-Y(T6SHRP,FM

2SA949-Y(T6SHRP,FM

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

2,704 -
2SA949-Y(T6SHRP,FM

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y(TE6,F,M)

2SA949-Y(TE6,F,M)

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

6,530 -
2SA949-Y(TE6,F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
MPSA18_D74Z

MPSA18_D74Z

TRANS NPN 45V 0.1A TO-92-3

onsemi

8,824 -
MPSA18_D74Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete NPN 100 mA 300mV @ 5mA, 50mA 50nA (ICBO) 500 @ 10mA, 5V 625 mW 100MHz 45 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
2SA949-Y,F(J

2SA949-Y,F(J

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

6,539 -
2SA949-Y,F(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y,ONK-1F(J

2SA949-Y,ONK-1F(J

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

3,107 -
2SA949-Y,ONK-1F(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
MPSA18_D75Z

MPSA18_D75Z

TRANS NPN 45V 0.1A TO-92-3

onsemi

6,258 -
MPSA18_D75Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete NPN 100 mA 300mV @ 5mA, 50mA 50nA (ICBO) 500 @ 10mA, 5V 625 mW 100MHz 45 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
2SA949-Y,ONK-1F(M

2SA949-Y,ONK-1F(M

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

9,915 -
2SA949-Y,ONK-1F(M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
2N5401_J05Z

2N5401_J05Z

TRANS PNP 150V 0.6A TO-92-3

onsemi

2,818 -
2N5401_J05Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete PNP 600 mA 500mV @ 5mA, 50mA 50nA (ICBO) 60 @ 10mA, 5V 625 mW 400MHz 150 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

6,257 -
2SA965-O(TE6,F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 120 V 150°C (TJ) - - Through Hole TO-92MOD
2SA965-O,F(J

2SA965-O,F(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

7,540 -
2SA965-O,F(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 120 V 150°C (TJ) - - Through Hole TO-92MOD
2N4953

2N4953

TRANS NPN 30V 1A TO-92-3

onsemi

9,319 -
2N4953

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete NPN 1 A 300mV @ 15mA, 150mA 50nA (ICBO) 200 @ 150mA, 10V 625 mW - 30 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
2SA965-Y(F,M)

2SA965-Y(F,M)

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

8,927 -
2SA965-Y(F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 120 V 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y(T6CANO,FM

2SA965-Y(T6CANO,FM

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

4,018 -
2SA965-Y(T6CANO,FM

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 120 V 150°C (TJ) - - Through Hole TO-92MOD
BC516_D75Z

BC516_D75Z

TRANS PNP DARL 30V 1A TO-92-3

onsemi

4,138 -
BC516_D75Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete PNP - Darlington 1 A 1V @ 100µA, 100mA 100nA (ICBO) 30000 @ 20mA, 2V 625 mW 200MHz 30 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
2SA965-Y,F(J

2SA965-Y,F(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

7,310 -
2SA965-Y,F(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 120 V 150°C (TJ) - - Through Hole TO-92MOD
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