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单个双极晶体管

制造商 系列 封装/外壳 包装 产品状态 晶体管类型 电流 - 集电极 (Ic)(最大值) 集电极饱和电压 (Vce)(最大值)@ Ib, Ic 电流 - 集电极截止(最大值) 直流电流增益(hFE)(最小值)@ Ic, Vce 功率 - 最大值 频率 - 跃迁 电压 - 集电极发射极击穿(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 晶体管类型 电流 - 集电极 (Ic)(最大值) 集电极饱和电压 (Vce)(最大值)@ Ib, Ic 电流 - 集电极截止(最大值) 直流电流增益(hFE)(最小值)@ Ic, Vce 功率 - 最大值 频率 - 跃迁 电压 - 集电极发射极击穿(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
MPSA55_D26Z

MPSA55_D26Z

TRANS PNP 60V 0.5A TO-92-3

onsemi

6,367 -
MPSA55_D26Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Obsolete PNP 500 mA 250mV @ 10mA, 100mA 100nA 100 @ 100mA, 1V 625 mW 50MHz 60 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
2SA1931(NOMARK,A,Q

2SA1931(NOMARK,A,Q

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

3,902 -
2SA1931(NOMARK,A,Q

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 50 V 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,BOSCHQ(J

2SA1931,BOSCHQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

3,353 -
2SA1931,BOSCHQ(J

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 50 V 150°C (TJ) - - Through Hole TO-220NIS
MPSA55_D27Z

MPSA55_D27Z

TRANS PNP 60V 0.5A TO-92-3

onsemi

5,183 -
MPSA55_D27Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Obsolete PNP 500 mA 250mV @ 10mA, 100mA 100nA 100 @ 100mA, 1V 625 mW 50MHz 60 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
2SA1931,KEHINQ(M

2SA1931,KEHINQ(M

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

3,059 -
2SA1931,KEHINQ(M

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 50 V 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,NETQ(J

2SA1931,NETQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

3,236 -
2SA1931,NETQ(J

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 50 V 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,NIKKIQ(J

2SA1931,NIKKIQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

5,004 -
2SA1931,NIKKIQ(J

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 50 V 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,NSEIKIQ(J

2SA1931,NSEIKIQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

5,314 -
2SA1931,NSEIKIQ(J

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 50 V 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,Q(J

2SA1931,Q(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

9,557 -
2SA1931,Q(J

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 50 V 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,SINFQ(J

2SA1931,SINFQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

5,844 -
2SA1931,SINFQ(J

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 50 V 150°C (TJ) - - Through Hole TO-220NIS
2SA1972,F(J

2SA1972,F(J

TRANS PNP 400V 0.5A TO-92MOD

Toshiba Semiconductor and Storage

6,547 -
2SA1972,F(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 500 mA 1V @ 10mA, 100mA 10µA (ICBO) 140 @ 20mA, 5V 900 mW 35MHz 400 V 150°C (TJ) - - Through Hole TO-92MOD
2SA1972,T6WNLF(J

2SA1972,T6WNLF(J

TRANS PNP 400V 0.5A TO-92MOD

Toshiba Semiconductor and Storage

5,207 -
2SA1972,T6WNLF(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 500 mA 1V @ 10mA, 100mA 10µA (ICBO) 140 @ 20mA, 5V 900 mW 35MHz 400 V 150°C (TJ) - - Through Hole TO-92MOD
2SA949-O(TE6,F,M)

2SA949-O(TE6,F,M)

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

4,393 -
2SA949-O(TE6,F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y(JVC1,F,M)

2SA949-Y(JVC1,F,M)

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

4,343 -
2SA949-Y(JVC1,F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y(T6JVC1,FM

2SA949-Y(T6JVC1,FM

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

6,539 -
2SA949-Y(T6JVC1,FM

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150 V 150°C (TJ) - - Through Hole TO-92MOD
MPSA55_D75Z

MPSA55_D75Z

TRANS PNP 60V 0.5A TO-92-3

onsemi

4,813 -
MPSA55_D75Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete PNP 500 mA 250mV @ 10mA, 100mA 100nA 100 @ 100mA, 1V 625 mW 50MHz 60 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
PBSS5160TVL

PBSS5160TVL

TRANS PNP 60V 1A TO-236AB

Nexperia USA Inc.

6,516 -
PBSS5160TVL

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active PNP 1 A 175mV @ 50mA, 500mA 100nA 200 @ 1mA, 5V - 150MHz 60 V 150°C (TJ) - - Surface Mount TO-236AB
MPSL51

MPSL51

TRANS PNP 100V 0.2A TO-92-3

onsemi

8,143 -
MPSL51

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete PNP 200 mA 300mV @ 5mA, 50mA 1µA (ICBO) 40 @ 50mA, 5V 625 mW 60MHz 100 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
MPSL51_D27Z

MPSL51_D27Z

TRANS PNP 100V 0.2A TO-92-3

onsemi

3,169 -
MPSL51_D27Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Obsolete PNP 200 mA 300mV @ 5mA, 50mA 1µA (ICBO) 40 @ 50mA, 5V 625 mW 60MHz 100 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
MPSL51_D75Z

MPSL51_D75Z

TRANS PNP 100V 0.2A TO-92-3

onsemi

5,414 -
MPSL51_D75Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete PNP 200 mA 300mV @ 5mA, 50mA 1µA (ICBO) 40 @ 50mA, 5V 625 mW 60MHz 100 V -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
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