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双极晶体管阵列,预偏置

制造商 系列 封装/外壳 包装 产品状态 晶体管类型 电流 - 集电极 (Ic)(最大值) 电阻 - 基极 (R1) 电阻 - 发射极基极 (R2) 直流电流增益(hFE)(最小值)@ Ic, Vce 集电极饱和电压 (Vce)(最大值)@ Ib, Ic 电流 - 集电极截止(最大值) 电压 - 集电极发射极击穿(最大值) 频率 - 跃迁 功率 - 最大值 等级 供应商设备封装 认证 安装类型

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 晶体管类型 电流 - 集电极 (Ic)(最大值) 电阻 - 基极 (R1) 电阻 - 发射极基极 (R2) 直流电流增益(hFE)(最小值)@ Ic, Vce 集电极饱和电压 (Vce)(最大值)@ Ib, Ic 电流 - 集电极截止(最大值) 电压 - 集电极发射极击穿(最大值) 频率 - 跃迁 功率 - 最大值 等级 供应商设备封装 认证 安装类型
RN4609(TE85L,F)

RN4609(TE85L,F)

TRANS NPN/PNP PREBIAS 0.3W SM6

Toshiba Semiconductor and Storage

1,303 -
RN4609(TE85L,F)

数据表

- SC-74, SOT-457 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 47kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 50V 200MHz 300mW - SM6 - Surface Mount
RN1610(TE85L,F)

RN1610(TE85L,F)

TRANS 2NPN PREBIAS 0.3W SM6

Toshiba Semiconductor and Storage

1,240 -
RN1610(TE85L,F)

数据表

- SC-74, SOT-457 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 4.7kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 50V 250MHz 300mW - SM6 - Surface Mount
RN4990FE,LXHF(CT

RN4990FE,LXHF(CT

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Toshiba Semiconductor and Storage

8,000 -
RN4990FE,LXHF(CT

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 4.7kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 50V 250MHz, 200MHz 100mW Automotive ES6 AEC-Q101 Surface Mount
RN4983FE,LXHF(CT

RN4983FE,LXHF(CT

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Toshiba Semiconductor and Storage

3,985 -
RN4983FE,LXHF(CT

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 22kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 50V 250MHz, 200MHz 100mW Automotive ES6 AEC-Q101 Surface Mount
RN4988FE,LF(CT

RN4988FE,LF(CT

NPN + PNP BRT Q1BSR22KOHM Q1BER4

Toshiba Semiconductor and Storage

4,000 -
RN4988FE,LF(CT

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 22kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 50V 250MHz, 200MHz 100mW - ES6 - Surface Mount
RN4989FE,LF(CT

RN4989FE,LF(CT

NPN + PNP BRT Q1BSR47KOHM Q1BER2

Toshiba Semiconductor and Storage

4,000 -
RN4989FE,LF(CT

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 47kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 50V 250MHz, 200MHz 100mW - ES6 - Surface Mount
RN4991FE,LF(CT

RN4991FE,LF(CT

NPN + PNP BRT Q1BSR10KOHM Q1BERI

Toshiba Semiconductor and Storage

4,000 -
RN4991FE,LF(CT

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 10kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 50V 250MHz, 200MHz 100mW - ES6 - Surface Mount
RN2906FE,LF(CT

RN2906FE,LF(CT

PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO

Toshiba Semiconductor and Storage

3,876 -
RN2906FE,LF(CT

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 4.7kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 50V 200MHz 100mW - ES6 - Surface Mount
RN1904FE,LF(CT

RN1904FE,LF(CT

TRANS 2NPN PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

3,425 -
RN1904FE,LF(CT

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 47kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 50V 250MHz 100mW - ES6 - Surface Mount
RN1903FE,LF(CT

RN1903FE,LF(CT

NPNX2 BRT Q1BSR22KOHM Q1BER22KOH

Toshiba Semiconductor and Storage

3,000 -
RN1903FE,LF(CT

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 22kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 50V 250MHz 100mW - ES6 - Surface Mount
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