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结型场效应晶体管(JFETs)

制造商 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 漏极到源极电压 (Vdss) 功率 - 最大值 工作温度 等级 供应商设备封装 认证 安装类型

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 漏极到源极电压 (Vdss) 功率 - 最大值 工作温度 等级 供应商设备封装 认证 安装类型
U441-E3

U441-E3

JFET 2N-CH 25V

Vishay Siliconix

2,536 -
U441-E3

数据表

- TO-71-6 Tube Obsolete 2 N-Channel (Dual) 25 V 6 mA @ 10 V - 1 V @ 1 nA 3pF @ 10V - - 500 mW -55°C ~ 150°C (TJ) - - - Through Hole
2N5277

2N5277

JFET

Microchip Technology

3,065 -
2N5277

数据表

* - Bulk Active - - - - - - - - - - - - - -
LS830 SOIC 8L

LS830 SOIC 8L

JFET 2N-CH 40V 8SOIC

Linear Integrated Systems, Inc.

5,717 -
LS830 SOIC 8L

数据表

LS830 8-SOIC (0.154", 3.90mm Width) Obsolete 2 N-Channel (Dual) 40 V 60 µA @ 10 V - 600 mV @ 1 nA 3pF @ 10V - 40 V 500 mW -55°C ~ 150°C (TJ) - 8-SOIC - Surface Mount
JANTX2N4857

JANTX2N4857

JFET N-CH 40V TO18

Microsemi Corporation

9,389 -
JANTX2N4857

数据表

- TO-206AA, TO-18-3 Metal Can Bulk Obsolete N-Channel 40 V 100 mA @ 15 V - 6 V @ 500 pA 18pF @ 10V (VGS) 40 Ohms 40 V 360 mW -65°C ~ 200°C (TJ) - TO-18 - Through Hole
2N4393

2N4393

JFET N-CH 40V TO18

Microchip Technology

3,797 -
2N4393

数据表

- - Bulk Active N-Channel 40 V 5 mA @ 20 V - 500 mV @ 1 nA 14pF @ 20V 100 Ohms - 1.8 W -55°C ~ 125°C (TJ) - TO-18 - Through Hole
2N4392

2N4392

JFET N-CH 40V TO18

Microchip Technology

4,820 -
2N4392

数据表

- - Bulk Active N-Channel 40 V 25 mA @ 20 V - 2 V @ 1 nA 14pF @ 20V 60 Ohms - 1.8 W -55°C ~ 125°C (TJ) - TO-18 - Through Hole
2N4391

2N4391

JFET N-CH 40V TO18

Microchip Technology

2,706 -
2N4391

数据表

- - Bulk Active N-Channel 40 V 50 mA @ 20 V - 4 V @ 1 nA 14pF @ 20V 30 Ohms - 1.8 W -55°C ~ 125°C (TJ) - TO-18 - Through Hole
2N3822

2N3822

JFET N-CH 50V TO72

Microchip Technology

5,074 -
2N3822

数据表

- TO-206AF, TO-72-4 Metal Can Bulk Discontinued at Digi-Key N-Channel 50 V 10 mA @ 15 V - 6 V @ 500 pA 6pF @ 15V - 50 V 300 mW -55°C ~ 200°C (TJ) Military TO-72 MIL-PRF-19500/375 Through Hole
2N3821

2N3821

JFET N-CH 50V TO72

Microchip Technology

7,250 -
2N3821

数据表

- TO-206AF, TO-72-4 Metal Can Bulk Active N-Channel 50 V 2.5 mA @ 15 V - 4 V @ 0.5 nA 6pF @ 15V - 50 V 300 mW -55°C ~ 200°C (TJ) Military TO-72 MIL-PRF-19500/375 Through Hole
MQ2N4392

MQ2N4392

JFET N-CH TO18

Microchip Technology

3,031 -
MQ2N4392

数据表

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel - - - - - - - - - - TO-18 (TO-206AA) - Through Hole
MQ2N4393

MQ2N4393

JFET N-CH TO18

Microchip Technology

7,403 -
MQ2N4393

数据表

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel - - - - - - - - - - TO-18 (TO-206AA) - Through Hole
MQ2N4391

MQ2N4391

JFET N-CH TO18

Microchip Technology

9,921 -
MQ2N4391

数据表

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel - - - - - - - - - - TO-18 (TO-206AA) - Through Hole
2N4391UB

2N4391UB

JFET N-CH

Microchip Technology

9,400 -
2N4391UB

数据表

- - Bulk Active - - - - - - - - - - - - - -
2N4392UB

2N4392UB

JFET N-CH

Microchip Technology

7,234 -
2N4392UB

数据表

* - Bulk Active - - - - - - - - - - - - - -
2N4393UB

2N4393UB

JFET N-CH

Microchip Technology

5,973 -
2N4393UB

数据表

- - Bulk Active - - - - - - - - - - - - - -
2N4392UB/TR

2N4392UB/TR

JFET

Microchip Technology

6,164 -
2N4392UB/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -
2N4393UB/TR

2N4393UB/TR

JFET

Microchip Technology

2,899 -
2N4393UB/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - -
2N4391UB/TR

2N4391UB/TR

JFET

Microchip Technology

2,004 -
2N4391UB/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - -
2N5546

2N5546

JFET - DUAL

Microchip Technology

7,322 -
2N5546

数据表

* - Bulk Active - - - - - - - - - - - - - -
2N5545

2N5545

JFET - DUAL

Microchip Technology

4,599 -
2N5545

数据表

* - Bulk Active - - - - - - - - - - - - - -
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