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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
MR2504

MR2504

DIODE GEN PURP 400V 25A MR

EIC SEMICONDUCTOR INC.

2,000 -
MR2504

数据表

- Microde Button Bag Active Standard 400 V 1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - 25A Automotive - Surface Mount MR -65°C ~ 175°C
10A05

10A05

DIODE GEN PURP 600V 10A D6

EIC SEMICONDUCTOR INC.

8,000 -
10A05

数据表

- D-6, Axial Tape & Reel (TR) Active Standard 600 V 1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 80pF @ 4V, 1MHz 10A - - Through Hole D6 -65°C ~ 150°C
MR754T/R

MR754T/R

DIODE GEN PURP 400V 6A D6

EIC SEMICONDUCTOR INC.

16,000 -
MR754T/R

数据表

- D-6, Axial Tape & Reel (TR) Active Standard 400 V 900 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V - 6A Automotive - Through Hole D6 -65°C ~ 175°C
ESJA04-03A

ESJA04-03A

DIODE GEN PURP 3KV 1MA M1A

EIC SEMICONDUCTOR INC.

15,000 -
ESJA04-03A

数据表

- Axial Bag Active Standard 3000 V 12 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 80 ns 2 µA @ 3000 V - 1mA - - Through Hole M1A 120°C (Max)
HVR320BULK

HVR320BULK

DIODE GEN PURP 2KV 3A DO201AD

EIC SEMICONDUCTOR INC.

2,481 -
HVR320BULK

数据表

- DO-201AD, Axial Bag Active Standard 2000 V 2.2 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 2000 V 36pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -40°C ~ 150°C
MURA110

MURA110

DIODE GEN PURP 100V 2A SMA

EIC SEMICONDUCTOR INC.

4,500 -
MURA110

数据表

- DO-214AC, SMA Bag Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 100 V - 2A - - Surface Mount DO-214AC (SMA) -65°C ~ 175°C
BY550-1000G

BY550-1000G

DIODE GEN PURP 1KV 5A DO201AD

EIC SEMICONDUCTOR INC.

5,050 -
BY550-1000G

数据表

- DO-201AD, Axial Bag Active Standard 1000 V 1.1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 20 µA @ 1000 V 50pF @ 4V, 1MHz 5A - - Through Hole DO-201AD -65°C ~ 175°C
MR760

MR760

DIODE GEN PURP 1KV 22A D6

EIC SEMICONDUCTOR INC.

2,800 -
MR760

数据表

- D-6, Axial Bag Active Standard 1000 V 900 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1000 V - 22A - - Through Hole D6 -65°C ~ 175°C
1N4006T/R

1N4006T/R

DIODE GEN PURP 800V 1A DO41

EIC SEMICONDUCTOR INC.

35,000 -
1N4006T/R

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Standard 800 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 800 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 175°C
1N4005T/R

1N4005T/R

DIODE GEN PURP 600V 1A DO41

EIC SEMICONDUCTOR INC.

10,000 -
1N4005T/R

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 600 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 175°C
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