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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
FR302T/R

FR302T/R

DIODE GEN PURP 100V 3A DO201AD

EIC SEMICONDUCTOR INC.

2,500 -
FR302T/R

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 100 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 100 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
FR304T/R

FR304T/R

DIODE GEN PURP 400V 3A DO201AD

EIC SEMICONDUCTOR INC.

3,750 -
FR304T/R

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 400 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 400 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
SB390

SB390

SCHOTTKY DO201 90V 3A 150C

EIC SEMICONDUCTOR INC.

7,500 -
SB390

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Schottky 90 V 790 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 500 V - 3A - - Through Hole DO-201AD -65°C ~ 150°C
RGP02-16E-T/R

RGP02-16E-T/R

DIODE GEN PURP 1.6KV 500MA DO41

EIC SEMICONDUCTOR INC.

100,000 -
RGP02-16E-T/R

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Standard 1600 V 1.8 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 1600 V 5pF @ 4V, 1MHz 500mA - - Through Hole DO-41 -65°C ~ 150°C
FR307T/R

FR307T/R

DIODE GEN PURP 1KV 3A DO201AD

EIC SEMICONDUCTOR INC.

7,500 -
FR307T/R

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
1N5406BULK

1N5406BULK

DIODE GEN PURP 600V 3A DO201AD

EIC SEMICONDUCTOR INC.

25,500 -
1N5406BULK

数据表

- DO-201AD, Axial Bag Active Standard 600 V 950 mV @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 28pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 175°C
1N5391BULK

1N5391BULK

DIODE GEN PURP 50V 1.5A DO41

EIC SEMICONDUCTOR INC.

19,500 -
1N5391BULK

数据表

- DO-204AL, DO-41, Axial Bag Active Standard 50 V 1.1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 15pF @ 4V, 1MHz 1.5A - - Through Hole DO-41 -65°C ~ 175°C
1N4007

1N4007

DIODE GEN PURP 1KV 1A DO41

EIC SEMICONDUCTOR INC.

15,000 -
1N4007

数据表

- DO-204AL, DO-41, Axial Box Active Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 1000 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 175°C
1N4004T/R

1N4004T/R

DIODE GEN PURP 400V 1A DO41

EIC SEMICONDUCTOR INC.

5,000 -
1N4004T/R

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 175°C
FR301BULK

FR301BULK

DIODE GEN PURP 50V 3A DO201AD

EIC SEMICONDUCTOR INC.

7,000 -
FR301BULK

数据表

- DO-201AD, Axial Bag Active Standard 50 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 50 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
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