| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
P2000MTLDIODE GEN PURP 1000V 20A P600 Diotec Semiconductor |
961 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Standard | 1000 V | 1.1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1000 V | - | 20A | - | - | Through Hole | P-600 | -50°C ~ 175°C |
|
SK4045YD2-3GDIODE SCHOTTKY 45V 40A TO263AB Diotec Semiconductor |
5,925 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | Schottky | 45 V | 620 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 110 µA @ 45 V | - | 40A | - | - | Surface Mount | TO-263AB (D2PAK) | -50°C ~ 150°C |
|
ESW6006DIODE GEN PURP 600V 60A TO247 Diotec Semiconductor |
444 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 600 V | 1.8 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 50 µA @ 600 V | - | 60A | - | - | Through Hole | TO-247 | -50°C ~ 175°C |
|
P2500WDIODE AVALANCHE 1600V 25A P600 Diotec Semiconductor |
266 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Avalanche | 1600 V | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1600 V | - | 25A | - | - | Through Hole | P-600 | -50°C ~ 175°C |
|
P2500TDIODE AVALANCHE 1300V 25A P600 Diotec Semiconductor |
936 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Avalanche | 1300 V | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1300 V | - | 25A | - | - | Through Hole | P-600 | -50°C ~ 175°C |
|
SIT08C065DIODE SIL CARB 650V 8A TO220AC Diotec Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 650 V | - | 8A | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
P2500XDIODE AVALANCHE 1800V 25A P600 Diotec Semiconductor |
940 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Avalanche | 1800 V | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1800 V | - | 25A | - | - | Through Hole | P-600 | -50°C ~ 175°C |
|
RHRP3060GDIODE GEN PURP 600V 30A TO220AC Diotec Semiconductor |
590 | - |
|
数据表 |
- | TO-220-2 | Bulk | Active | Standard | 600 V | 1.7 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 5 µA @ 600 V | - | 30A | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
SIT10C065DIODE SIL CARB 650V 10A TO220AC Diotec Semiconductor |
980 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | - | 10A | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
SIT12C065DIODE SIL CARB 650V 12A TO220AC Diotec Semiconductor |
1,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 650 V | - | 12A | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |