Diodes Incorporated|单个二极管 - 页 71

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
DTH1506FP FRED GPP RECTIFIER ITO-220AC TUB Diodes Incorporated	35	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	2.9 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	45 µA @ 600 V	-	15A	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 150°C
DSC06C065 SILICON CARBIDE RECTIFIER TO220A Diodes Incorporated	30	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	187pF @ 0V, 1MHz	6A	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
DSC04C065 SILICON CARBIDE RECTIFIER TO220A Diodes Incorporated	47	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	150pF @ 100mV, 1MHz	4A	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
DSC04C065FP SILICON CARBIDE RECTIFIER ITO-22 Diodes Incorporated	46	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	152pF @ 100mV, 1MHz	4A	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
DSC04A065 SILICON CARBIDE RECTIFIER TO220A Diodes Incorporated	90	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	187pF @ 100mV, 1MHz	4A	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
DSC04A065FP SILICON CARBIDE RECTIFIER ITO-22 Diodes Incorporated	47	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	191pF @ 100mV, 1MHz	4A	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
DSC06C065FP SILICON CARBIDE RECTIFIER ITO-22 Diodes Incorporated	45	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	191pF @ 100mV, 1MHz	6A	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
DSC10C065 SILICON CARBIDE RECTIFIER TO220A Diodes Incorporated	50	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	230 µA @ 650 V	355pF @ 100mV, 1MHz	10A	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
DSC06A065FP SILICON CARBIDE RECTIFIER ITO-22 Diodes Incorporated	50	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	273pF @ 100mV, 1MHz	6A	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
DSC06A065 SILICON CARBIDE RECTIFIER TO220A Diodes Incorporated	46	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	272pF @ 100mV, 1MHz	6A	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C

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