Diodes Incorporated|单个二极管 - 页 143

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
S3DB DIODE GEN PURP 200V 3A SMB Diodes Incorporated	9,197	-	询价单	数据表	-	DO-214AA, SMB	Bulk	Obsolete	Standard	200 V	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	10 µA @ 200 V	40pF @ 4V, 1MHz	3A	-	-	Surface Mount	SMB	-55°C ~ 150°C
SBR2M60S1F-7 DIODE SBR 60V 2A SOD123F Diodes Incorporated	10,805	-	询价单	数据表	SBR®	SOD-123F	Tape & Reel (TR)	Active	Super Barrier	60 V	700 mV @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	800 nA @ 60 V	-	2A	-	-	Surface Mount	SOD-123F	-65°C ~ 175°C
S3ABF DIODE GEN PURP 50V 3A SMB Diodes Incorporated	3,445	-	询价单	数据表	-	DO-214AA, SMB	Bulk	Obsolete	Standard	50 V	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	40pF @ 4V, 1MHz	3A	-	-	Surface Mount	SMB	-65°C ~ 150°C
UF1004-A52 DIODE GEN PURP 400V 1A DO41 Diodes Incorporated	3,634	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Bulk	Obsolete	Standard	400 V	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	20pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-41	-65°C ~ 150°C
LTTH806RF5 DIODE GEN PURP 600V 8A F5 Diodes Incorporated	5,838	-	询价单	数据表	-	3-PowerDFN	Bulk	Obsolete	Standard	600 V	2.9 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	60pF @ 4V, 1MHz	8A	-	-	Surface Mount	F5	-55°C ~ 150°C
1N4002L DIODE GEN PURP 100V 1A DO41 Diodes Incorporated	8,289	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Bulk	Obsolete	Standard	100 V	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 100 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-41	-55°C ~ 125°C
1N5402 DIODE GEN PURP 200V 3A DO201AD Diodes Incorporated	5,932	-	询价单	数据表	-	DO-201AD, Axial	Bulk	Obsolete	Standard	200 V	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	50pF @ 4V, 1MHz	3A	-	-	Through Hole	DO-201AD	-55°C ~ 125°C
LSC04065Q8 DIODE SIL CARB 650V 4A DFN8080 Diodes Incorporated	2,793	-	询价单	数据表	-	4-PowerTSFN	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	-	4A	-	-	Surface Mount	DFN8080	-55°C ~ 175°C
LSC06065Q8 DIODE SIL CARB 650V 6A DFN8080 Diodes Incorporated	2,168	-	询价单	数据表	-	4-PowerTSFN	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	-	6A	-	-	Surface Mount	DFN8080	-55°C ~ 175°C
1N5401 DIODE GEN PURP 100V 3A DO201AD Diodes Incorporated	8,462	-	询价单	数据表	-	DO-201AD, Axial	Bulk	Obsolete	Standard	100 V	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	50pF @ 4V, 1MHz	3A	-	-	Through Hole	DO-201AD	-55°C ~ 125°C

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