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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CDBJSC8650-GDIODE SIL CARB 650V 8A TO220-2 Comchip Technology |
4,967 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 560pF @ 0V, 1MHz | 8A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
CDBJFSC5650-GDIODE SIL CARBIDE 650V 5A TO220F Comchip Technology |
346 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 430pF @ 0V, 1MHz | 5A | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
CDBD2SC21200-GDIODE SIL CARB 1.2KV 6.2A TO263 Comchip Technology |
381 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 136pF @ 0V, 1MHz | 6.2A | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
CDBDSC8650-GDIODE SIL CARB 650V 25.5A DPAK Comchip Technology |
342 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 550pF @ 0V, 1MHz | 25.5A | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
|
CDBJFSC8650-GDIODE SIL CARBIDE 650V 8A TO220F Comchip Technology |
479 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 560pF @ 0V, 1MHz | 8A | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
|
CDBJSC10650-GDIODE SIL CARB 650V 10A TO220F Comchip Technology |
472 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 710pF @ 0V, 1MHz | 10A | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
|
CDBDSC10650-GDIODE SIL CARBIDE 650V 10A DPAK Comchip Technology |
355 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 690pF @ 0V, 1MHz | 10A | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
|
CDBJFSC101200-GDIODE SIL CARB 1.2KV 10A TO220F Comchip Technology |
553 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 780pF @ 0V, 1MHz | 10A | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
|
CDBDSC51200-GDIODE SIL CARBIDE 1.2KV 18A DPAK Comchip Technology |
411 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 475pF @ 0V, 1MHz | 18A | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
CDBFR03100-HFDIODE SCHOTTKY 100V 300MA 1005 Comchip Technology |
1,424 | - |
|
数据表 |
- | 1005 (2512 Metric) | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 820 mV @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | 25pF @ 1V, 1MHz | 300mA | - | - | Surface Mount | 1005/SOD-323F | -40°C ~ 150°C |
