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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CDBC2200LR-HFDIODE SCHOTTKY 200V 2A DO214AB Comchip Technology |
9,645 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Schottky | 200 V | 850 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 200 V | 30pF @ 4V, 1MHz | 2A | - | - | Surface Mount | DO-214AB (SMC) | -50°C ~ 175°C |
|
FR606A-GDIODE GEN PURP 800V 6A R-6 Comchip Technology |
8,891 | - |
|
数据表 |
- | R-6, Axial | Bulk | Active | Standard | 800 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 800 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
FR603A-GDIODE GEN PURP 200V 6A R-6 Comchip Technology |
5,522 | - |
|
数据表 |
- | R-6, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 200 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
FR607A-GDIODE GEN PURP 1KV 6A R-6 Comchip Technology |
6,935 | - |
|
数据表 |
- | R-6, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 1000 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
FR605T-GDIODE GEN PURP 600V 6A R-6 Comchip Technology |
8,112 | - |
|
数据表 |
- | R-6, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 10 µA @ 600 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
FR605A-GDIODE GEN PURP 600V 6A R-6 Comchip Technology |
9,753 | - |
|
数据表 |
- | R-6, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 10 µA @ 600 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
FR601T-GDIODE GEN PURP 50V 6A R-6 Comchip Technology |
6,429 | - |
|
数据表 |
- | R-6, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 50 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
FR607T-GDIODE GEN PURP 1KV 6A R-6 Comchip Technology |
8,887 | - |
|
数据表 |
- | R-6, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 1000 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
FR604A-GDIODE GEN PURP 400V 6A R-6 Comchip Technology |
7,147 | - |
|
数据表 |
- | R-6, Axial | Bulk | Active | Standard | 400 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 400 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
FR604T-GDIODE GEN PURP 400V 6A R-6 Comchip Technology |
7,075 | - |
|
数据表 |
- | R-6, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 400 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
