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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-20TQ035S-M3

VS-20TQ035S-M3

DIODE SCHOTTKY 35V 20A TO263AB

Vishay General Semiconductor - Diodes Division

6,423 -
VS-20TQ035S-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 35 V 570 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 2.7 mA @ 35 V 1400pF @ 5V, 1MHz 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
VS-20TQ040S-M3

VS-20TQ040S-M3

DIODE SCHOTTKY 40V 20A TO263AB

Vishay General Semiconductor - Diodes Division

9,309 -
VS-20TQ040S-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 40 V 570 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 2.7 mA @ 40 V 1400pF @ 5V, 1MHz 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SDT40B100ST

SDT40B100ST

DIODE SCHOTTKY 100V 40A TO220-3

Diodes Incorporated

9,275 -
SDT40B100ST

数据表

- TO-220-3 Tube Active Schottky 100 V 680 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 120 µA @ 100 V - 40A - - Through Hole TO-220-3 -55°C ~ 150°C
VB20150S-M3/8W

VB20150S-M3/8W

DIODE SCHOTTKY 150V 20A TO263AB

Vishay General Semiconductor - Diodes Division

8,449 -
VB20150S-M3/8W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 150 V 1.43 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 150 V - 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
VB20150S-M3/4W

VB20150S-M3/4W

DIODE SCHOTTKY 150V 20A TO263AB

Vishay General Semiconductor - Diodes Division

4,420 -
VB20150S-M3/4W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 150 V 1.43 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 150 V - 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
FMN-1206S

FMN-1206S

DIODE GEN PURP 600V 20A TO220F

Sanken Electric USA Inc.

2,753 -
FMN-1206S

数据表

- TO-220-2 Full Pack Tube Obsolete Standard 600 V 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 200 µA @ 600 V - 20A - - Through Hole TO-220F-2L -40°C ~ 150°C
SD830-T

SD830-T

DIODE SCHOTTKY 30V 8A DO201AD

Diodes Incorporated

6,507 -
SD830-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Schottky 30 V 550 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 30 V - 8A - - Through Hole DO-201AD -65°C ~ 150°C
SD930-T

SD930-T

DIODE SCHOTTKY 30V 9A DO201AD

Diodes Incorporated

6,276 -
SD930-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Schottky 30 V 480 mV @ 9 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 30 V 900pF @ 4V, 1MHz 9A - - Through Hole DO-201AD -65°C ~ 150°C
SD940-T

SD940-T

DIODE SCHOTTKY 40V 9A DO201AD

Diodes Incorporated

9,860 -
SD940-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Schottky 40 V 480 mV @ 9 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 40 V 900pF @ 4V, 1MHz 9A - - Through Hole DO-201AD -65°C ~ 150°C
VB30100SG-E3/8W

VB30100SG-E3/8W

DIODE SCHOTTKY 100V 30A TO263AB

Vishay General Semiconductor - Diodes Division

4,472 -
VB30100SG-E3/8W

数据表

TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 100 V 1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 100 V - 30A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VB30100SG-E3/4W

VB30100SG-E3/4W

DIODE SCHOTTKY 100V 30A TO263AB

Vishay General Semiconductor - Diodes Division

6,781 -
VB30100SG-E3/4W

数据表

TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 100 V 1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 100 V - 30A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VB30100SG-M3/8W

VB30100SG-M3/8W

DIODE SCHOTTKY 100V 30A TO263AB

Vishay General Semiconductor - Diodes Division

2,490 -
VB30100SG-M3/8W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 100 V 1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 100 V - 30A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
HERAF1008G

HERAF1008G

DIODE GEN PURP 1KV 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
HERAF1008G

数据表

- TO-220-2 Full Pack Tube Active Standard 1000 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1004G

HERAF1004G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
HERAF1004G

数据表

- TO-220-2 Full Pack Tube Active Standard 300 V 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1007GH

HERAF1007GH

80NS, 10A, 800V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
HERAF1007GH

数据表

- TO-220-2 Full Pack Tube Active Standard 800 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V 60pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF1008GH

HERAF1008GH

80NS, 10A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
HERAF1008GH

数据表

- TO-220-2 Full Pack Tube Active Standard 1000 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SF2006G

SF2006G

DIODE GEN PURP 400V 20A TO220AB

Taiwan Semiconductor Corporation

995 -
SF2006G

数据表

- TO-220-3 Tube Active Standard 400 V 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 400 V 80pF @ 4V, 1MHz 20A - - Through Hole TO-220AB -55°C ~ 150°C
V20PWM63HM3/I

V20PWM63HM3/I

DIODE SCHOTTKY 60V 20A SLIMDPAK

Vishay General Semiconductor - Diodes Division

8,952 -
V20PWM63HM3/I

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 60 V 670 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 35 µA @ 60 V 3000pF @ 4V, 1MHz 20A Automotive AEC-Q101 Surface Mount SlimDPAK -40°C ~ 175°C
SFAF1004G

SFAF1004G

DIODE GEN PURP 200V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
SFAF1004G

数据表

- TO-220-2 Full Pack Tube Active Standard 200 V 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 170pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
UG5J

UG5J

DIODE GEN PURP 600V 5A TO220AC

Taiwan Semiconductor Corporation

1,000 -
UG5J

数据表

- TO-220-2 Tube Active Standard 600 V 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 30 µA @ 600 V - 5A - - Through Hole TO-220AC -55°C ~ 150°C
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