| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR4L40DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
8,727 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Not For New Designs | Standard | 400 V | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 65pF @ 4V, 1MHz | 4A | - | - | Through Hole | DO-201AD | -55°C ~ 175°C |
|
MUR4L40HDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
2,463 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Not For New Designs | Standard | 400 V | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 65pF @ 4V, 1MHz | 4A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 175°C |
|
TPAU3D65NS, 3A, 200V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
2,805 | - |
|
数据表 |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Obsolete | Avalanche | 200 V | 1.88 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 400 nA @ 200 V | 60pF @ 4V, 1MHz | 3A | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
|
TPAU3G65NS, 3A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
5,519 | - |
|
数据表 |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Obsolete | Avalanche | 400 V | 1.88 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 400 V | 60pF @ 4V, 1MHz | 3A | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
HS1BL RVGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
6,229 | - |
|
数据表 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 100 V | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | 1A | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1DL RVGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,366 | - |
|
数据表 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | 1A | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1FL RVGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
4,143 | - |
|
数据表 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 300 V | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 300 V | 20pF @ 4V, 1MHz | 1A | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1GL RVGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
8,618 | - |
|
数据表 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | 1A | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1JL RVGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
4,659 | - |
|
数据表 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 600 V | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 1A | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
SS13LHRVGDIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation |
3,445 | - |
|
数据表 |
- | DO-219AB | Tape & Reel (TR) | Active | Schottky | 30 V | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 30 V | - | 1A | - | - | Surface Mount | Sub SMA | -55°C ~ 125°C |