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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SRA2090

SRA2090

20A, 90V, PLANAR SCHOTTKY

Taiwan Semiconductor Corporation

2,908 -
SRA2090

数据表

- TO-220-2 Tube Active Schottky 90 V 920 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 90 V - 20A - - Through Hole TO-220AC -55°C ~ 150°C
SRA2030

SRA2030

20A, 30V, PLANAR SCHOTTKY

Taiwan Semiconductor Corporation

4,215 -
SRA2030

数据表

- TO-220-2 Tube Active Schottky 30 V 550 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V - 20A - - Through Hole TO-220AC -55°C ~ 125°C
SRA2020

SRA2020

20A, 20V, PLANAR SCHOTTKY

Taiwan Semiconductor Corporation

2,353 -
SRA2020

数据表

- TO-220-2 Tube Active Schottky 20 V 550 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V - 20A - - Through Hole TO-220AC -55°C ~ 125°C
TSCDT08065G1

TSCDT08065G1

DIODE SCHOTTKY 650V 8A TO220AC

Taiwan Semiconductor Corporation

995 -
TSCDT08065G1

数据表

- TO-220-2 Tube Active Schottky 650 V 1.45 V @ 8 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 39pF @ 400V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 175°C
TSCDF08065G1

TSCDF08065G1

DIODE SCHOTTKY 650V 8A ITO220AC

Taiwan Semiconductor Corporation

973 -
TSCDF08065G1

数据表

- TO-220-2 Full Pack Tube Active Schottky 650 V 1.45 V @ 8 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 39pF @ 400V, 1MHz 8A - - Through Hole ITO-220AC -55°C ~ 175°C
TSCDT10065G1

TSCDT10065G1

DIODE SCHOTTKY 650V 10A TO220AC

Taiwan Semiconductor Corporation

2,986 -
TSCDT10065G1

数据表

- TO-220-2 Tube Active Schottky 650 V 1.45 V @ 10 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 45pF @ 400V, 1MHz 10A - - Through Hole TO-220AC -55°C ~ 175°C
TSCDF10065G1

TSCDF10065G1

DIODE SCHOTTKY 650V 10A ITO220AC

Taiwan Semiconductor Corporation

986 -
TSCDF10065G1

数据表

- TO-220-2 Full Pack Tube Active Schottky 650 V 1.45 V @ 10 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 45pF @ 400V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 175°C
HS2BA R3G

HS2BA R3G

DIODE GEN PURP 100V 1.5A DO214AC

Taiwan Semiconductor Corporation

22 -
HS2BA R3G

数据表

- DO-214AC, SMA Tape & Reel (TR) Discontinued at Digi-Key Standard 100 V 1 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 100 V 50pF @ 4V, 1MHz 1.5A - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
HS2JA R3G

HS2JA R3G

DIODE GEN PURP 600V 1.5A DO214AC

Taiwan Semiconductor Corporation

20 -
HS2JA R3G

数据表

- DO-214AC, SMA Tape & Reel (TR) Discontinued at Digi-Key Standard 600 V 1.7 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 600 V 30pF @ 4V, 1MHz 1.5A - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
TSCDT12065G1

TSCDT12065G1

DIODE SCHOTTKY 650V 12A TO220AC

Taiwan Semiconductor Corporation

990 -
TSCDT12065G1

数据表

- TO-220-2 Tube Active Schottky 650 V 1.45 V @ 12 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 55.3pF @ 400V, 1MHz 12A - - Through Hole TO-220AC -55°C ~ 175°C
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