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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
GPA805H

GPA805H

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

998 -
GPA805H

数据表

- TO-220-2 Tube Active Standard 600 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 50pF @ 4V, 1MHz 8A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA807

GPA807

DIODE GEN PURP 1KV 8A TO220AC

Taiwan Semiconductor Corporation

984 -
GPA807

数据表

- TO-220-2 Tube Active Standard 1000 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 50pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
MUR8L60

MUR8L60

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

1,000 -
MUR8L60

数据表

- TO-220-2 Tube Active Standard 600 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 5 µA @ 600 V - 8A - - Through Hole TO-220AC -55°C ~ 175°C
HERAF1008G

HERAF1008G

DIODE GEN PURP 1KV 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
HERAF1008G

数据表

- TO-220-2 Full Pack Tube Active Standard 1000 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1004G

HERAF1004G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
HERAF1004G

数据表

- TO-220-2 Full Pack Tube Active Standard 300 V 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1007GH

HERAF1007GH

80NS, 10A, 800V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
HERAF1007GH

数据表

- TO-220-2 Full Pack Tube Active Standard 800 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V 60pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF1008GH

HERAF1008GH

80NS, 10A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
HERAF1008GH

数据表

- TO-220-2 Full Pack Tube Active Standard 1000 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SF2006G

SF2006G

DIODE GEN PURP 400V 20A TO220AB

Taiwan Semiconductor Corporation

995 -
SF2006G

数据表

- TO-220-3 Tube Active Standard 400 V 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 400 V 80pF @ 4V, 1MHz 20A - - Through Hole TO-220AB -55°C ~ 150°C
SFAF1004G

SFAF1004G

DIODE GEN PURP 200V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
SFAF1004G

数据表

- TO-220-2 Full Pack Tube Active Standard 200 V 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 170pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
UG5J

UG5J

DIODE GEN PURP 600V 5A TO220AC

Taiwan Semiconductor Corporation

1,000 -
UG5J

数据表

- TO-220-2 Tube Active Standard 600 V 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 30 µA @ 600 V - 5A - - Through Hole TO-220AC -55°C ~ 150°C
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