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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HERAF1003GH50NS, 10A, 200V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
8,784 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 200 V | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 80pF @ 4V, 1MHz | 10A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF802G50NS, 8A, 100V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
8,259 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 100 V | 1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 100 V | 80pF @ 4V, 1MHz | 8A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HS3DH50NS, 3A, 200V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
3,000 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 200 V | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 80pF @ 4V, 1MHz | 3A | Automotive | AEC-Q101 | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
HERAF802GH50NS, 8A, 100V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
4,945 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 100 V | 1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 100 V | 80pF @ 4V, 1MHz | 8A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
HS3FDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
2,990 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 300 V | - | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 80pF @ 4V, 1MHz | 3A | - | - | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
HERAF1003G50NS, 10A, 200V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
5,946 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 200 V | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 80pF @ 4V, 1MHz | 10A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF1001GH50NS, 10A, 50V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
4,897 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 50 V | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 50 V | 80pF @ 4V, 1MHz | 10A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF1001G50NS, 10A, 50V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
4,646 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 50 V | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 50 V | 80pF @ 4V, 1MHz | 10A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF1002GH50NS, 10A, 100V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
6,542 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 100 V | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 100 V | 80pF @ 4V, 1MHz | 10A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF1002G50NS, 10A, 100V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
8,769 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 100 V | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 100 V | 80pF @ 4V, 1MHz | 10A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
