STMicroelectronics|单个二极管 - 页 86

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
STPSC10065D DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	538	-	询价单	数据表	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	10A	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC10065DLF DIODE SIL CARB 650V 10A PWRFLAT STMicroelectronics	2,074	-	询价单	数据表	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	10A	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
STPSC5H12D DIODE SIL CARB 1.2KV 5A TO220AC STMicroelectronics	2,772	-	询价单	数据表	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	450pF @ 0V, 1MHz	5A	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STTH31AC06SWL DIODE GEN PURP 600V 30A TO247 STMicroelectronics	187	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	600 V	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-247	-40°C ~ 175°C
STPSC10065DY DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	1,016	-	询价单	数据表	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	10A	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC10H065G-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	516	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	10A	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STPSC10065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,206	-	询价单	数据表	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	10A	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STPSC10H065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,278	-	询价单	数据表	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	10A	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STTH60RQ06W DIODE GEN PURP 600V 60A DO247 STMicroelectronics	313	-	询价单	数据表	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	-	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	80 µA @ 600 V	-	60A	-	-	Through Hole	DO-247	175°C (Max)
STTH3006PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	444	-	询价单	数据表	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	1.85 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	30A	-	-	Through Hole	DOP3I	175°C (Max)

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